Bandwidth improvement of CMOS-APD with carrier-acceleration technique

Myung Jae Lee, Jeong Min Lee, Holger Rücker, Woo Young Choi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We present a silicon avalanche photodetector (APD) based on multiple P+/N-well junctions fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology. In order to overcome the photodetection-bandwidth limitation of the CMOS-APD based on P+/N-well junction, carrier-acceleration technique is proposed. With this technique, the photogenerated carriers in the charge-neutral N-well region are accelerated by the extrinsic electric field. To induce the extrinsic electric field inside N-well, the CMOS-APD is designed with multiple junctions to reduce the distance between two different N-well biasing contacts. Its performance is simulated and measured with different bias voltages applied to N-well, and it is demonstrated that the CMOS-APD with the carrier-acceleration technique provides higher photodetection bandwidth.

Original languageEnglish
Article number7083731
Pages (from-to)1387-1390
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number13
Publication statusPublished - 2015 Jul 1

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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