Band Structure Engineering of WSe₂ Homo-Junction Interfaces via Thickness Control

Engineering

• Thickness 100%
• Band Offset 50%
• Band Structure 50%
• Tungsten 50%
• Electronics 50%
• Interlayer 25%
• Tunneling 25%
• Heterostructures 25%
• MoS2 25%
• Molybdenum Disulfide 25%
• Generation Device 25%
• Engineering Structure 25%
• Performance 25%
• Recombination 25%

Material Science

• Optoelectronics 50%
• Physical Property 50%
• Semiconductor Material 25%
• Electronic Property 25%