Band Alignment Transition from Type i to Type II of InP/ In0.48Ga0.52P quantum Dots

Hyuna Jung, Hyun Kum, Jinyoung Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Band alignment transition from type-I to type-II of InP/In0.48Ga0.52P quantum dots (QDs) is observed by modifying the geometrical factors of the dome-shaped QDs. Strain distribution in InP/In0.48Ga0.52P QD is calculated using a valence force field (VFF) model. With the strain Hamiltonian from the VFF model, electrical structures of the QDs are obtained using 8-band k•p model. The results from this theoretical study show that the band alignment of the InP/In0.48Ga0.52P QDs can be tailored from type-I to type-II by controlling the size of the QDs, and flat valence band can be achieved at certain values of height and width of the QDs. In addition, InP/In0.48Ga0.52 QDs of various sizes with the same effective bandgap but different band alignment is observed.

Original languageEnglish
Title of host publicationProceedings of TENCON 2018 - 2018 IEEE Region 10 Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781538654576
Publication statusPublished - 2019 Feb 22
Event2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, Korea, Republic of
Duration: 2018 Oct 282018 Oct 31

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450


Conference2018 IEEE Region 10 Conference, TENCON 2018
Country/TerritoryKorea, Republic of

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (Ministry of Science, ICT and Future Planning) (No. 2017R1C1B5076588).

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering


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