Band Alignment Transition from Type i to Type II of InP/ In0.48Ga0.52P quantum Dots

Hyuna Jung; Hyun Kum; Jinyoung Hwang

doi:10.1109/TENCON.2018.8650474

Band Alignment Transition from Type i to Type II of InP/ In_0.48Ga_0.52P quantum Dots

Hyuna Jung, Hyun Kum, Jinyoung Hwang

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Band alignment transition from type-I to type-II of InP/In_0.48Ga_0.52P quantum dots (QDs) is observed by modifying the geometrical factors of the dome-shaped QDs. Strain distribution in InP/In_0.48Ga_0.52P QD is calculated using a valence force field (VFF) model. With the strain Hamiltonian from the VFF model, electrical structures of the QDs are obtained using 8-band k•p model. The results from this theoretical study show that the band alignment of the InP/In_0.48Ga_0.52P QDs can be tailored from type-I to type-II by controlling the size of the QDs, and flat valence band can be achieved at certain values of height and width of the QDs. In addition, InP/In_0.48Ga_0.52 QDs of various sizes with the same effective bandgap but different band alignment is observed.

Original language	English
Title of host publication	Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1045-1048
Number of pages	4
ISBN (Electronic)	9781538654576
DOIs	https://doi.org/10.1109/TENCON.2018.8650474
Publication status	Published - 2019 Feb 22
Event	2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, Korea, Republic of Duration: 2018 Oct 28 → 2018 Oct 31

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume	2018-October
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Conference

Conference	2018 IEEE Region 10 Conference, TENCON 2018
Country/Territory	Korea, Republic of
City	Jeju
Period	18/10/28 → 18/10/31

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (Ministry of Science, ICT and Future Planning) (No. 2017R1C1B5076588).

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TENCON.2018.8650474

Cite this

Jung, H., Kum, H., & Hwang, J. (2019). Band Alignment Transition from Type i to Type II of InP/ In_0.48Ga_0.52P quantum Dots. In Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference (pp. 1045-1048). [8650474] (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2018-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2018.8650474

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title = "Band Alignment Transition from Type i to Type II of InP/ In0.48Ga0.52P quantum Dots",

abstract = "Band alignment transition from type-I to type-II of InP/In0.48Ga0.52P quantum dots (QDs) is observed by modifying the geometrical factors of the dome-shaped QDs. Strain distribution in InP/In0.48Ga0.52P QD is calculated using a valence force field (VFF) model. With the strain Hamiltonian from the VFF model, electrical structures of the QDs are obtained using 8-band k•p model. The results from this theoretical study show that the band alignment of the InP/In0.48Ga0.52P QDs can be tailored from type-I to type-II by controlling the size of the QDs, and flat valence band can be achieved at certain values of height and width of the QDs. In addition, InP/In0.48Ga0.52 QDs of various sizes with the same effective bandgap but different band alignment is observed.",

author = "Hyuna Jung and Hyun Kum and Jinyoung Hwang",

note = "Funding Information: ACKNOWLEDGMENT This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (Ministry of Science, ICT and Future Planning) (No. 2017R1C1B5076588). Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE Region 10 Conference, TENCON 2018 ; Conference date: 28-10-2018 Through 31-10-2018",

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Jung, H, Kum, H & Hwang, J 2019, Band Alignment Transition from Type i to Type II of InP/ In_0.48Ga_0.52P quantum Dots. in Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference., 8650474, IEEE Region 10 Annual International Conference, Proceedings/TENCON, vol. 2018-October, Institute of Electrical and Electronics Engineers Inc., pp. 1045-1048, 2018 IEEE Region 10 Conference, TENCON 2018, Jeju, Korea, Republic of, 18/10/28. https://doi.org/10.1109/TENCON.2018.8650474

Band Alignment Transition from Type i to Type II of InP/ In_0.48Ga_0.52P quantum Dots. / Jung, Hyuna; Kum, Hyun; Hwang, Jinyoung.
Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1045-1048 8650474 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2018-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N1 - Funding Information: ACKNOWLEDGMENT This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (Ministry of Science, ICT and Future Planning) (No. 2017R1C1B5076588). Publisher Copyright: © 2018 IEEE.

PY - 2019/2/22

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N2 - Band alignment transition from type-I to type-II of InP/In0.48Ga0.52P quantum dots (QDs) is observed by modifying the geometrical factors of the dome-shaped QDs. Strain distribution in InP/In0.48Ga0.52P QD is calculated using a valence force field (VFF) model. With the strain Hamiltonian from the VFF model, electrical structures of the QDs are obtained using 8-band k•p model. The results from this theoretical study show that the band alignment of the InP/In0.48Ga0.52P QDs can be tailored from type-I to type-II by controlling the size of the QDs, and flat valence band can be achieved at certain values of height and width of the QDs. In addition, InP/In0.48Ga0.52 QDs of various sizes with the same effective bandgap but different band alignment is observed.

AB - Band alignment transition from type-I to type-II of InP/In0.48Ga0.52P quantum dots (QDs) is observed by modifying the geometrical factors of the dome-shaped QDs. Strain distribution in InP/In0.48Ga0.52P QD is calculated using a valence force field (VFF) model. With the strain Hamiltonian from the VFF model, electrical structures of the QDs are obtained using 8-band k•p model. The results from this theoretical study show that the band alignment of the InP/In0.48Ga0.52P QDs can be tailored from type-I to type-II by controlling the size of the QDs, and flat valence band can be achieved at certain values of height and width of the QDs. In addition, InP/In0.48Ga0.52 QDs of various sizes with the same effective bandgap but different band alignment is observed.

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