Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs

Seung Min Lee; Do Hwan Jung; Seonno Yoon; Yoonseo Jang; Jung Hwan Yum; Eric S. Larsen; Christopher W. Bielawski; Jungwoo Oh

doi:10.1016/j.apsusc.2019.144107

Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs

Seung Min Lee, Do Hwan Jung, Seonno Yoon, Yoonseo Jang, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Jungwoo Oh

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study, we demonstrated the band alignment between a BeO and AlGaN/GaN heterointerface. The bandgap of the BeO film was measured to be 8.2 ± 0.05 eV by reflection electron energy loss spectroscopy. A valence band offset of the BeO/AlGaN interface was determined to be 1.1 ± 0.1 eV by X-ray photoelectron spectroscopy. Based on the spectral analysis result, the conduction band offset was calculated to be 3.2 ± 0.1 eV. When BeO was used as the gate dielectric of an AlGaN/GaN transistor, the on/off current ratio was improved to 10⁷. The results of the band alignment and electrical testing open up opportunities for the application of BeO films to the gate dielectric of GaN-based high-power devices.

Original language	English
Article number	144107
Journal	Applied Surface Science
Volume	505
DOIs	https://doi.org/10.1016/j.apsusc.2019.144107
Publication status	Published - 2020 Mar 1

Bibliographical note

Funding Information:
This research was supported by Korea Electric Power Corporation (Grant number3): R18XA06-03 and by the Ministry of Science and ICT (MSIT), Korea , under the ICT Consilience Creative Program ( IITP-2019-2017-0-01015 ) supervised by the Institute for Information & Communications Technology Promotion (IITP) . CWB, JHY, and ESL are grateful to the Institute for Basic Science (IBS-R019) as well as the BK21 Plus Program funded by the Ministry of Education and the National Research Foundation of Korea for their support.

Publisher Copyright:
© 2019

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2019.144107

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@article{63c6e9a273164a5eb380647486bb6e36,

title = "Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs",

abstract = "In this study, we demonstrated the band alignment between a BeO and AlGaN/GaN heterointerface. The bandgap of the BeO film was measured to be 8.2 ± 0.05 eV by reflection electron energy loss spectroscopy. A valence band offset of the BeO/AlGaN interface was determined to be 1.1 ± 0.1 eV by X-ray photoelectron spectroscopy. Based on the spectral analysis result, the conduction band offset was calculated to be 3.2 ± 0.1 eV. When BeO was used as the gate dielectric of an AlGaN/GaN transistor, the on/off current ratio was improved to 107. The results of the band alignment and electrical testing open up opportunities for the application of BeO films to the gate dielectric of GaN-based high-power devices.",

author = "Lee, {Seung Min} and Jung, {Do Hwan} and Seonno Yoon and Yoonseo Jang and Yum, {Jung Hwan} and Larsen, {Eric S.} and Bielawski, {Christopher W.} and Jungwoo Oh",

note = "Funding Information: This research was supported by Korea Electric Power Corporation (Grant number3): R18XA06-03 and by the Ministry of Science and ICT (MSIT), Korea , under the ICT Consilience Creative Program ( IITP-2019-2017-0-01015 ) supervised by the Institute for Information & Communications Technology Promotion (IITP) . CWB, JHY, and ESL are grateful to the Institute for Basic Science (IBS-R019) as well as the BK21 Plus Program funded by the Ministry of Education and the National Research Foundation of Korea for their support. Publisher Copyright: {\textcopyright} 2019",

year = "2020",

month = mar,

day = "1",

doi = "10.1016/j.apsusc.2019.144107",

language = "English",

volume = "505",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs

AU - Lee, Seung Min

AU - Jung, Do Hwan

AU - Yoon, Seonno

AU - Jang, Yoonseo

AU - Yum, Jung Hwan

AU - Larsen, Eric S.

AU - Bielawski, Christopher W.

AU - Oh, Jungwoo

N1 - Funding Information: This research was supported by Korea Electric Power Corporation (Grant number3): R18XA06-03 and by the Ministry of Science and ICT (MSIT), Korea , under the ICT Consilience Creative Program ( IITP-2019-2017-0-01015 ) supervised by the Institute for Information & Communications Technology Promotion (IITP) . CWB, JHY, and ESL are grateful to the Institute for Basic Science (IBS-R019) as well as the BK21 Plus Program funded by the Ministry of Education and the National Research Foundation of Korea for their support. Publisher Copyright: © 2019

PY - 2020/3/1

Y1 - 2020/3/1

N2 - In this study, we demonstrated the band alignment between a BeO and AlGaN/GaN heterointerface. The bandgap of the BeO film was measured to be 8.2 ± 0.05 eV by reflection electron energy loss spectroscopy. A valence band offset of the BeO/AlGaN interface was determined to be 1.1 ± 0.1 eV by X-ray photoelectron spectroscopy. Based on the spectral analysis result, the conduction band offset was calculated to be 3.2 ± 0.1 eV. When BeO was used as the gate dielectric of an AlGaN/GaN transistor, the on/off current ratio was improved to 107. The results of the band alignment and electrical testing open up opportunities for the application of BeO films to the gate dielectric of GaN-based high-power devices.

AB - In this study, we demonstrated the band alignment between a BeO and AlGaN/GaN heterointerface. The bandgap of the BeO film was measured to be 8.2 ± 0.05 eV by reflection electron energy loss spectroscopy. A valence band offset of the BeO/AlGaN interface was determined to be 1.1 ± 0.1 eV by X-ray photoelectron spectroscopy. Based on the spectral analysis result, the conduction band offset was calculated to be 3.2 ± 0.1 eV. When BeO was used as the gate dielectric of an AlGaN/GaN transistor, the on/off current ratio was improved to 107. The results of the band alignment and electrical testing open up opportunities for the application of BeO films to the gate dielectric of GaN-based high-power devices.

UR - http://www.scopus.com/inward/record.url?scp=85078668131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85078668131&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.144107

DO - 10.1016/j.apsusc.2019.144107

M3 - Article

AN - SCOPUS:85078668131

SN - 0169-4332

VL - 505

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 144107

ER -

Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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