Balanced Performance Enhancements of a-InGaZnO Thin Film Transistors by Using All-Amorphous Dielectric Multilayers Sandwiching High-k CaCu₃Ti₄O₁₂

Engineering

• Thin-Film Transistor 100%
• Performance 66%
• Enhancement 50%
• Transistor 33%
• Band Offset 33%
• Current Ratio 16%
• Low Power Consumption 16%
• Development 16%
• Requirements 16%
• Low Density 16%
• Integration 16%
• Natural Resources Exploration 16%

Material Science

• Dielectric Material 66%
• Multilayers 66%
• Amorphous Material 50%
• Al2O3 33%
• Saturation 16%

Physics

• Dielectrics 66%
• Performance 66%
• Threshold Voltage 16%
• Mobility 16%
• Exploration 16%