Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light

Yoon Ho Jung; Seon Yeong Kim; Hae Chang Jeong; Hong Gyu Park; Dai Hyun Kim; Tae Wan Kim; Dae Shik Seo

doi:10.1149/2.0091409ssl

Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light

Yoon Ho Jung, Seon Yeong Kim, Hae Chang Jeong, Hong Gyu Park, Dai Hyun Kim, Tae Wan Kim, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis-and trans-azobenzeneYIZO TFTswere compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TAYIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with amobility of 0.44 cm²/V s, a threshold voltage (VTH) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 10⁶.

Original language	English
Pages (from-to)	Q51-Q53
Journal	ECS Solid State Letters
Volume	3
Issue number	9
DOIs	https://doi.org/10.1149/2.0091409ssl
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light",

abstract = "A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis-and trans-azobenzeneYIZO TFTswere compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TAYIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with amobility of 0.44 cm2/V s, a threshold voltage (VTH) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 106.",

author = "Jung, {Yoon Ho} and Kim, {Seon Yeong} and Jeong, {Hae Chang} and Park, {Hong Gyu} and Kim, {Dai Hyun} and Kim, {Tae Wan} and Seo, {Dae Shik}",

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T1 - Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light

AU - Jung, Yoon Ho

AU - Kim, Seon Yeong

AU - Jeong, Hae Chang

AU - Park, Hong Gyu

AU - Kim, Dai Hyun

AU - Kim, Tae Wan

AU - Seo, Dae Shik

PY - 2014/1/1

Y1 - 2014/1/1

N2 - A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis-and trans-azobenzeneYIZO TFTswere compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TAYIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with amobility of 0.44 cm2/V s, a threshold voltage (VTH) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 106.

AB - A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis-and trans-azobenzeneYIZO TFTswere compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TAYIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with amobility of 0.44 cm2/V s, a threshold voltage (VTH) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 106.

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Azobenzene molecular effects on solution-processed Y-In-Zn-O thin-film transistors treated with light

Abstract

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