A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis-and trans-azobenzeneYIZO TFTswere compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TAYIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with amobility of 0.44 cm2/V s, a threshold voltage (VTH) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 106.
|Journal||ECS Solid State Letters|
|Publication status||Published - 2014 Jan 1|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering