Au-free Si MOS compatible Ni/Ge/Al ohmic contacts to n+-InGaAs

Jungwoo Oh, Seonno Yoon, Bugeun Ki, Yunwon Song, Hi Deok Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Complementary metal-oxide semiconductor-compatible Ni/Ge/Al ohmic contacts to a n+-InGaAs layer exhibited a specific contact resistivity of 9.8 × 10-8 Ωcm2 at 300 and 5.1 × 10-8 Ωcm2 at 500 C. Only 7 nm of the n+-InGaAs layer was consumed during the Ni/Ge/Al ohmic formation. For comparison, Ni/Al and Ge/Ni/Al contacts showed a higher specific contact resistivity with significant consumption of the n+-InGaAs layer. The relatively low contact resistivities for Ni/Ge/Al are attributed to the transient increase in the donor concentration of n+-InGaAs. Ge metals segregated towards the n+-InGaAs surface and redistributed into the Ga and In sites, which increased the doping and acted as a diffusion barrier. These electrical and physical analyses of Ni/Ge/Al ohmic contacts to n+-InGaAs advance Au-free metallization techniques for highly scaled InGaAs channel metal-oxide field-effect transistors.

Original languageEnglish
Pages (from-to)804-808
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number4
Publication statusPublished - 2015 Apr 1

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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