Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

Prasad Sarangapani; Cory Weber; Jiwon Chang; Stephen Cea; Michael Povolotskyi; Gerhard Klimeck; Tillmann Kubis

doi:10.1109/TNANO.2018.2840836

Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

Prasad Sarangapani, Cory Weber, Jiwon Chang, Stephen Cea, Michael Povolotskyi, Gerhard Klimeck, Tillmann Kubis

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The metal-semiconductor contact resistivity has started to play a critical role for the overall device performance as Si is reaching 10-nm size ranges. The International Technology Roadmap for Semiconductors (ITRS) target predicts a requirement of 10^-9; Ω·cm² by 2023 which has been a challenging target to achieve. This paper explores the impact of doping concentration, Schottky barrier height, strain, and SiGe mole fraction on the resistivity of Si/SiGe p-type metal-oxide semiconductor (PMOS) contacts with 20-band atomistic tight binding quantum transport simulations. Commonly used simple effective mass approximation models are shown to overestimate the resistivity values. The predicted model results are compared with experimental data and the device parameters needed to achieve 10^-9; Ω·cm² are identified.

Original language	English
Article number	8365831
Pages (from-to)	968-973
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2018.2840836
Publication status	Published - 2018 Sept

Bibliographical note

Funding Information:
Manuscript received December 15, 2017; revised May 14, 2018; accepted May 22, 2018. Date of publication May 25, 2018; date of current version September 6, 2018. This work was supported in part by the Intel Corporation and in part by the Accelerating Nanoscale Transistor Innovation with NEMO5 on Blue Waters PRAC allocation support by the National Science Foundation (Award OCI-0832623). This work was supported in part by funding from the Semiconductor Research Corporations Global Research Collaboration (GRC) (2653.001). The review of this paper was arranged by the IEEE NANO 2017 Guest Editors. (Corresponding author: Prasad Sarangapani.) P. Sarangapani, M. Povolotskyi, G. Klimeck, and T. Kubis are with the Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907 USA (e-mail:, psaranga@purdue.edu; mpovolot@purdue.edu; gekco@ purdue.edu; tkubis@purdue.edu).

Publisher Copyright:
© 2002-2012 IEEE.

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2018.2840836

Cite this

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title = "Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts",

abstract = "The metal-semiconductor contact resistivity has started to play a critical role for the overall device performance as Si is reaching 10-nm size ranges. The International Technology Roadmap for Semiconductors (ITRS) target predicts a requirement of 10-9; Ω·cm2 by 2023 which has been a challenging target to achieve. This paper explores the impact of doping concentration, Schottky barrier height, strain, and SiGe mole fraction on the resistivity of Si/SiGe p-type metal-oxide semiconductor (PMOS) contacts with 20-band atomistic tight binding quantum transport simulations. Commonly used simple effective mass approximation models are shown to overestimate the resistivity values. The predicted model results are compared with experimental data and the device parameters needed to achieve 10-9; Ω·cm2 are identified.",

author = "Prasad Sarangapani and Cory Weber and Jiwon Chang and Stephen Cea and Michael Povolotskyi and Gerhard Klimeck and Tillmann Kubis",

note = "Funding Information: Manuscript received December 15, 2017; revised May 14, 2018; accepted May 22, 2018. Date of publication May 25, 2018; date of current version September 6, 2018. This work was supported in part by the Intel Corporation and in part by the Accelerating Nanoscale Transistor Innovation with NEMO5 on Blue Waters PRAC allocation support by the National Science Foundation (Award OCI-0832623). This work was supported in part by funding from the Semiconductor Research Corporations Global Research Collaboration (GRC) (2653.001). The review of this paper was arranged by the IEEE NANO 2017 Guest Editors. (Corresponding author: Prasad Sarangapani.) P. Sarangapani, M. Povolotskyi, G. Klimeck, and T. Kubis are with the Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907 USA (e-mail:, psaranga@purdue.edu; mpovolot@purdue.edu; gekco@ purdue.edu; tkubis@purdue.edu). Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

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N2 - The metal-semiconductor contact resistivity has started to play a critical role for the overall device performance as Si is reaching 10-nm size ranges. The International Technology Roadmap for Semiconductors (ITRS) target predicts a requirement of 10-9; Ω·cm2 by 2023 which has been a challenging target to achieve. This paper explores the impact of doping concentration, Schottky barrier height, strain, and SiGe mole fraction on the resistivity of Si/SiGe p-type metal-oxide semiconductor (PMOS) contacts with 20-band atomistic tight binding quantum transport simulations. Commonly used simple effective mass approximation models are shown to overestimate the resistivity values. The predicted model results are compared with experimental data and the device parameters needed to achieve 10-9; Ω·cm2 are identified.

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Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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