Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs

Jiwon Chang; Leonard F. Register; Sanjay K. Banerje

Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs

Jiwon Chang, Leonard F. Register, Sanjay K. Banerje

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the thin film thickness. This gap opening could open the possibility of TIbased MOSFETs and band-to-band tunnel FETs. In this work we consider the latter. Specifically, we explore the transport properties of lateral tunnel FETs based on Bi2Se3, one of the most promising TI materials, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis.

Original language	English
Title of host publication	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	43-46
Number of pages	4
ISBN (Electronic)	9780615717562
Publication status	Published - 2012
Event	2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States Duration: 2012 Sept 5 → 2012 Sept 7

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
Country/Territory	United States
City	Denver
Period	12/9/5 → 12/9/7

Bibliographical note

Funding Information:
ACKNOWLEDGMENT The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support.

Publisher Copyright:
© 2012 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Cite this

Chang, J., Register, L. F., & Banerje, S. K. (2012). Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings (pp. 43-46). (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc..

Chang, Jiwon ; Register, Leonard F. ; Banerje, Sanjay K. / Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. Institute of Electrical and Electronics Engineers Inc., 2012. pp. 43-46 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{23abae58c91249258c0bc49f50eb960b,

title = "Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs",

abstract = "Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the thin film thickness. This gap opening could open the possibility of TIbased MOSFETs and band-to-band tunnel FETs. In this work we consider the latter. Specifically, we explore the transport properties of lateral tunnel FETs based on Bi2Se3, one of the most promising TI materials, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis.",

author = "Jiwon Chang and Register, {Leonard F.} and Banerje, {Sanjay K.}",

note = "Funding Information: ACKNOWLEDGMENT The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support. Publisher Copyright: {\textcopyright} 2012 IEEE.; 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 ; Conference date: 05-09-2012 Through 07-09-2012",

year = "2012",

language = "English",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "43--46",

booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings",

address = "United States",

}

Chang, J, Register, LF & Banerje, SK 2012, Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 43-46, 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012, Denver, United States, 12/9/5.

Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs. / Chang, Jiwon; Register, Leonard F.; Banerje, Sanjay K.
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. Institute of Electrical and Electronics Engineers Inc., 2012. p. 43-46 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs

AU - Chang, Jiwon

AU - Register, Leonard F.

AU - Banerje, Sanjay K.

N1 - Funding Information: ACKNOWLEDGMENT The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support. Publisher Copyright: © 2012 IEEE.

PY - 2012

Y1 - 2012

N2 - Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the thin film thickness. This gap opening could open the possibility of TIbased MOSFETs and band-to-band tunnel FETs. In this work we consider the latter. Specifically, we explore the transport properties of lateral tunnel FETs based on Bi2Se3, one of the most promising TI materials, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis.

AB - Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the thin film thickness. This gap opening could open the possibility of TIbased MOSFETs and band-to-band tunnel FETs. In this work we consider the latter. Specifically, we explore the transport properties of lateral tunnel FETs based on Bi2Se3, one of the most promising TI materials, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis.

UR - http://www.scopus.com/inward/record.url?scp=85088007058&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85088007058&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85088007058

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 43

EP - 46

BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012

Y2 - 5 September 2012 through 7 September 2012

ER -

Chang J, Register LF, Banerje SK. Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings. Institute of Electrical and Electronics Engineers Inc. 2012. p. 43-46. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Atomistic quantum transport simulation of topological insulator Bi2Se3 tunnel FETs

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this