Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI thin films. The gap results from interaction of conduction band (CB) and valence band (VB) surface states from the opposite surfaces of a thin film, and its size is determined by the thin film thickness. This gap opening could open the possibility of TIbased MOSFETs and band-to-band tunnel FETs. In this work we consider the latter. Specifically, we explore the transport properties of lateral tunnel FETs based on Bi2Se3, one of the most promising TI materials, using quantum ballistic transport simulations with the tight-binding Hamiltonian in the atomic orbital basis.
|Title of host publication||International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|Publication status||Published - 2012|
|Event||2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States|
Duration: 2012 Sept 5 → 2012 Sept 7
|Name||International Conference on Simulation of Semiconductor Processes and Devices, SISPAD|
|Conference||2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012|
|Period||12/9/5 → 12/9/7|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT The authors acknowledge financial support from the Nanoelectronics Research Initiative supported Southwest Academy of Nanoelectronics (NRI-SWAN) center. We thank the Texas advanced computing center (TACC) for computational support.
© 2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Computer Science Applications
- Modelling and Simulation