Atomic transport and stability during annealing of HfO2 and HfAlO with an ultrathin layer of SiO2 on Si(001)

Hyo Sik Chang; Hyunsang Hwang; Mann Ho Cho; Hyun Kyung Kim; Dae Won Moon

doi:10.1116/1.1633568

Atomic transport and stability during annealing of HfO₂ and HfAlO with an ultrathin layer of SiO₂ on Si(001)

Hyo Sik Chang, Hyunsang Hwang, Mann Ho Cho, Hyun Kyung Kim, Dae Won Moon

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The microstructure of HfO₂/SiO₂/Si and HfAlO/SiO ₂/Si layered structures was investigated by medium energy ion scattering spectroscopy. The films were prepared by atomic layer chemical vapor deposition. The effect of interface strain on the thermal stability of the films was investigated. It was found that HfAlO film exhibits much stronger resistance to the oxygen diffusion than the HfO₂ film.

Original language	English
Pages (from-to)	165-169
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	1
DOIs	https://doi.org/10.1116/1.1633568
Publication status	Published - 2004 Jan

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "The microstructure of HfO2/SiO2/Si and HfAlO/SiO 2/Si layered structures was investigated by medium energy ion scattering spectroscopy. The films were prepared by atomic layer chemical vapor deposition. The effect of interface strain on the thermal stability of the films was investigated. It was found that HfAlO film exhibits much stronger resistance to the oxygen diffusion than the HfO2 film.",

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AU - Cho, Mann Ho

AU - Kim, Hyun Kyung

AU - Moon, Dae Won

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N2 - The microstructure of HfO2/SiO2/Si and HfAlO/SiO 2/Si layered structures was investigated by medium energy ion scattering spectroscopy. The films were prepared by atomic layer chemical vapor deposition. The effect of interface strain on the thermal stability of the films was investigated. It was found that HfAlO film exhibits much stronger resistance to the oxygen diffusion than the HfO2 film.

AB - The microstructure of HfO2/SiO2/Si and HfAlO/SiO 2/Si layered structures was investigated by medium energy ion scattering spectroscopy. The films were prepared by atomic layer chemical vapor deposition. The effect of interface strain on the thermal stability of the films was investigated. It was found that HfAlO film exhibits much stronger resistance to the oxygen diffusion than the HfO2 film.

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Atomic transport and stability during annealing of HfO₂ and HfAlO with an ultrathin layer of SiO₂ on Si(001)

Abstract

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