Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature

W. S. Cho; J. Y. Kim; N. G. Park; I. W. Lyo; K. Jeong; S. S. Kim; D. S. Choi; C. N. Whang; K. H. Chae

doi:10.1016/S0039-6028(00)00344-7

Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature

W. S. Cho, J. Y. Kim, N. G. Park, I. W. Lyo, K. Jeong, S. S. Kim, D. S. Choi, C. N. Whang, K. H. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface.

Original language	English
Pages (from-to)	L309-L314
Journal	Surface Science
Volume	453
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(00)00344-7
Publication status	Published - 2000 May 10

Bibliographical note

Funding Information:
The authors wish to acknowledge the financial support of the Korea Research Foundation (Project No. 98-015-D00092) and the Korea Science and Engineering Foundation (Project No. 981-0209-038-2).

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(00)00344-7

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@article{89aacb0800d24f75aaa5863a14fea7aa,

title = "Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature",

abstract = "The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 {\AA} and 3.47 {\AA} from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 {\AA} from the second layer of the Si(001) surface.",

author = "Cho, {W. S.} and Kim, {J. Y.} and Park, {N. G.} and Lyo, {I. W.} and K. Jeong and Kim, {S. S.} and Choi, {D. S.} and Whang, {C. N.} and Chae, {K. H.}",

note = "Funding Information: The authors wish to acknowledge the financial support of the Korea Research Foundation (Project No. 98-015-D00092) and the Korea Science and Engineering Foundation (Project No. 981-0209-038-2).",

year = "2000",

month = may,

day = "10",

doi = "10.1016/S0039-6028(00)00344-7",

language = "English",

volume = "453",

pages = "L309--L314",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

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TY - JOUR

T1 - Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature

AU - Cho, W. S.

AU - Kim, J. Y.

AU - Park, N. G.

AU - Lyo, I. W.

AU - Jeong, K.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Whang, C. N.

AU - Chae, K. H.

N1 - Funding Information: The authors wish to acknowledge the financial support of the Korea Research Foundation (Project No. 98-015-D00092) and the Korea Science and Engineering Foundation (Project No. 981-0209-038-2).

PY - 2000/5/10

Y1 - 2000/5/10

N2 - The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface.

AB - The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface.

UR - http://www.scopus.com/inward/record.url?scp=0000409784&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000409784&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(00)00344-7

DO - 10.1016/S0039-6028(00)00344-7

M3 - Article

AN - SCOPUS:0000409784

SN - 0039-6028

VL - 453

SP - L309-L314

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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