Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering

W. S. Cho; J. Y. Kim; S. S. Kim; D. S. Choi; K. Jeong; I. W. Lyo; C. N. Whang; K. H. Chae

doi:10.1016/S0039-6028(01)00762-2

Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering

W. S. Cho, J. Y. Kim, S. S. Kim, D. S. Choi, K. Jeong, I. W. Lyo, C. N. Whang, K. H. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

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Abstract

The atomic structure of Ba layer on Si(0 0 1)-(2×1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(0 0 1) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00±0.05 angstroms from the second layer of Si(0 0 1) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50±0.05 angstroms from the second layer of Si(0 0 1).

Original language	English
Pages (from-to)	L259-L266
Journal	Surface Science
Volume	476
Issue number	3
DOIs	https://doi.org/10.1016/S0039-6028(01)00762-2
Publication status	Published - 2001 Apr 1

Bibliographical note

Funding Information:
Authors thanks to T.N. Wittberg at University of Dayton for donation of Ba dispenser. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Atomic-scale Surface Science Research Center (ASSRC) at Yonsei University.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(01)00762-2

Cite this

@article{c7c40fc2053d473da78bda0f69f05e03,

title = "Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering",

abstract = "The atomic structure of Ba layer on Si(0 0 1)-(2×1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(0 0 1) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00±0.05 angstroms from the second layer of Si(0 0 1) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50±0.05 angstroms from the second layer of Si(0 0 1).",

author = "Cho, {W. S.} and Kim, {J. Y.} and Kim, {S. S.} and Choi, {D. S.} and K. Jeong and Lyo, {I. W.} and Whang, {C. N.} and Chae, {K. H.}",

note = "Funding Information: Authors thanks to T.N. Wittberg at University of Dayton for donation of Ba dispenser. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Atomic-scale Surface Science Research Center (ASSRC) at Yonsei University.",

year = "2001",

month = apr,

day = "1",

doi = "10.1016/S0039-6028(01)00762-2",

language = "English",

volume = "476",

pages = "L259--L266",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "3",

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TY - JOUR

T1 - Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering

AU - Cho, W. S.

AU - Kim, J. Y.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Jeong, K.

AU - Lyo, I. W.

AU - Whang, C. N.

AU - Chae, K. H.

N1 - Funding Information: Authors thanks to T.N. Wittberg at University of Dayton for donation of Ba dispenser. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Atomic-scale Surface Science Research Center (ASSRC) at Yonsei University.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - The atomic structure of Ba layer on Si(0 0 1)-(2×1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(0 0 1) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00±0.05 angstroms from the second layer of Si(0 0 1) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50±0.05 angstroms from the second layer of Si(0 0 1).

AB - The atomic structure of Ba layer on Si(0 0 1)-(2×1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(0 0 1) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00±0.05 angstroms from the second layer of Si(0 0 1) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50±0.05 angstroms from the second layer of Si(0 0 1).

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U2 - 10.1016/S0039-6028(01)00762-2

DO - 10.1016/S0039-6028(01)00762-2

M3 - Article

AN - SCOPUS:0035311553

SN - 0039-6028

VL - 476

SP - L259-L266

JO - Surface Science

JF - Surface Science

IS - 3

ER -

Atomic structure of Ba layer on Si(0 0 1)-(2×1) surface studied by low energy ion scattering

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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