Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations

Sangyoon Lee; Jeongwoo Seo; Inkyu Sohn; Youngjae Kang; Changseung Lee; Wooyoung Yang; Seung Min Chung; Hyungjun Kim

doi:10.1109/IITC/MAM57687.2023.10154820

Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations

Sangyoon Lee, Jeongwoo Seo, Inkyu Sohn, Youngjae Kang, Changseung Lee, Wooyoung Yang, Seung Min Chung, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Among chalcogenides for phase-change memory, Sb2Te3 is attracting attention for its huge potential, along with recent demands for atomic layer deposition (ALD). We aimed to study atomic-scale thin film growth and phase transformation of ALD Sb2Te3 thin films with substrate dependency. Comparatively, thin film growth trends of ALD Sb2Te3 on SiO2 and W substrate were studied by observing transformation of crystal structures, and trends in electrical resistivity. On SiO2, predominant amorphous phases at initial stage were observed, followed by polycrystalline island growth with randomly oriented grains. However, on crystalline W, the highly out-of-plane (00l) orientations and layer-by-layer growth was found.

Original language	English
Title of host publication	2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350310979
DOIs	https://doi.org/10.1109/IITC/MAM57687.2023.10154820
Publication status	Published - 2023
Event	2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Dresden, Germany Duration: 2023 May 22 → 2023 May 25

Publication series

Name	2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings

Conference

Conference	2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023
Country/Territory	Germany
City	Dresden
Period	23/5/22 → 23/5/25

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/IITC/MAM57687.2023.10154820

Cite this

Lee, S., Seo, J., Sohn, I., Kang, Y., Lee, C., Yang, W., Chung, S. M., & Kim, H. (2023). Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations. In 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings (2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC/MAM57687.2023.10154820

Lee, Sangyoon ; Seo, Jeongwoo ; Sohn, Inkyu et al. / Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations. 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings).

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title = "Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations",

abstract = "Among chalcogenides for phase-change memory, Sb2Te3 is attracting attention for its huge potential, along with recent demands for atomic layer deposition (ALD). We aimed to study atomic-scale thin film growth and phase transformation of ALD Sb2Te3 thin films with substrate dependency. Comparatively, thin film growth trends of ALD Sb2Te3 on SiO2 and W substrate were studied by observing transformation of crystal structures, and trends in electrical resistivity. On SiO2, predominant amorphous phases at initial stage were observed, followed by polycrystalline island growth with randomly oriented grains. However, on crystalline W, the highly out-of-plane (00l) orientations and layer-by-layer growth was found.",

keywords = "antimony telluride, atomic layer deposition, atomic-scale, crystal phase transformation, substrate dependency",

author = "Sangyoon Lee and Jeongwoo Seo and Inkyu Sohn and Youngjae Kang and Changseung Lee and Wooyoung Yang and Chung, {Seung Min} and Hyungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 ; Conference date: 22-05-2023 Through 25-05-2023",

year = "2023",

doi = "10.1109/IITC/MAM57687.2023.10154820",

language = "English",

series = "2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings",

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Lee, S, Seo, J, Sohn, I, Kang, Y, Lee, C, Yang, W, Chung, SM & Kim, H 2023, Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations. in 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings. 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023, Dresden, Germany, 23/5/22. https://doi.org/10.1109/IITC/MAM57687.2023.10154820

Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations. / Lee, Sangyoon; Seo, Jeongwoo; Sohn, Inkyu et al.
2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations

AU - Lee, Sangyoon

AU - Seo, Jeongwoo

AU - Sohn, Inkyu

AU - Kang, Youngjae

AU - Lee, Changseung

AU - Yang, Wooyoung

AU - Chung, Seung Min

AU - Kim, Hyungjun

PY - 2023

Y1 - 2023

N2 - Among chalcogenides for phase-change memory, Sb2Te3 is attracting attention for its huge potential, along with recent demands for atomic layer deposition (ALD). We aimed to study atomic-scale thin film growth and phase transformation of ALD Sb2Te3 thin films with substrate dependency. Comparatively, thin film growth trends of ALD Sb2Te3 on SiO2 and W substrate were studied by observing transformation of crystal structures, and trends in electrical resistivity. On SiO2, predominant amorphous phases at initial stage were observed, followed by polycrystalline island growth with randomly oriented grains. However, on crystalline W, the highly out-of-plane (00l) orientations and layer-by-layer growth was found.

AB - Among chalcogenides for phase-change memory, Sb2Te3 is attracting attention for its huge potential, along with recent demands for atomic layer deposition (ALD). We aimed to study atomic-scale thin film growth and phase transformation of ALD Sb2Te3 thin films with substrate dependency. Comparatively, thin film growth trends of ALD Sb2Te3 on SiO2 and W substrate were studied by observing transformation of crystal structures, and trends in electrical resistivity. On SiO2, predominant amorphous phases at initial stage were observed, followed by polycrystalline island growth with randomly oriented grains. However, on crystalline W, the highly out-of-plane (00l) orientations and layer-by-layer growth was found.

KW - antimony telluride

KW - atomic layer deposition

KW - atomic-scale

KW - crystal phase transformation

KW - substrate dependency

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M3 - Conference contribution

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T3 - 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings

BT - 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023

Y2 - 22 May 2023 through 25 May 2023

ER -

Lee S, Seo J, Sohn I, Kang Y, Lee C, Yang W et al. Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations. In 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings). doi: 10.1109/IITC/MAM57687.2023.10154820

Atomic-scale Crystal Phase Transformation of Atomic Layer Deposited Antimony Telluride Thin Films with Substrate-dependent Orientations

Abstract

Publication series

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Bibliographical note

All Science Journal Classification (ASJC) codes

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