Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

Yi Rang Lim; Jin Kyu Han; Yeoheung Yoon; Jae Bok Lee; Cheolho Jeon; Min Choi; Hyunju Chang; Noejung Park; Jung Hwa Kim; Zonghoon Lee; Wooseok Song; Sung Myung; Sun Sook Lee; Ki Seok An; Jong Hyun Ahn; Jongsun Lim

doi:10.1002/adma.201901405

Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

Yi Rang Lim, Jin Kyu Han, Yeoheung Yoon, Jae Bok Lee, Cheolho Jeon, Min Choi, Hyunju Chang, Noejung Park, Jung Hwa Kim, Zonghoon Lee, Wooseok Song, Sung Myung, Sun Sook Lee, Ki Seok An, Jong Hyun Ahn, Jongsun Lim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS₂₍₁₋_x₎Se₂_x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS_1.62Se_0.38, MoS_1.37Se_0.63, MoS_1.15Se_0.85, and MoS_0.46Se_1.54 alloys, as well as MoS₂ and MoSe₂. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS₂ crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS₂ and MoSe₂, are unambiguously achieved.

Original language	English
Article number	1901405
Journal	Advanced Materials
Volume	31
Issue number	29
DOIs	https://doi.org/10.1002/adma.201901405
Publication status	Published - 2019 Jul 19

Bibliographical note

Funding Information:
This research was supported by a grant (2011-0031636) from the Center for Advanced Soft Electronics under the Global Frontier Research Program funded by the Ministry of Science, ICT and Future Planning, Korea. C.J. was supported by the grant (10063400) through the Korea Evaluation Institute of Industrial Technology (KEIT) funded by the Ministry of Trade, Industry and Energy, Korea. J.H.K and Z.L. were supported by IBS-R019-D1 (Institute for Basic Science, Korea).

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201901405

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Lim, Y. R., Han, J. K., Yoon, Y., Lee, J. B., Jeon, C., Choi, M., Chang, H., Park, N., Kim, J. H., Lee, Z., Song, W., Myung, S., Lee, S. S., An, K. S., Ahn, J. H., & Lim, J. (2019). Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications. Advanced Materials, 31(29), Article 1901405. https://doi.org/10.1002/adma.201901405

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title = "Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications",

abstract = "Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1−x)Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2, are unambiguously achieved.",

author = "Lim, {Yi Rang} and Han, {Jin Kyu} and Yeoheung Yoon and Lee, {Jae Bok} and Cheolho Jeon and Min Choi and Hyunju Chang and Noejung Park and Kim, {Jung Hwa} and Zonghoon Lee and Wooseok Song and Sung Myung and Lee, {Sun Sook} and An, {Ki Seok} and Ahn, {Jong Hyun} and Jongsun Lim",

note = "Funding Information: This research was supported by a grant (2011-0031636) from the Center for Advanced Soft Electronics under the Global Frontier Research Program funded by the Ministry of Science, ICT and Future Planning, Korea. C.J. was supported by the grant (10063400) through the Korea Evaluation Institute of Industrial Technology (KEIT) funded by the Ministry of Trade, Industry and Energy, Korea. J.H.K and Z.L. were supported by IBS-R019-D1 (Institute for Basic Science, Korea). Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Lim, Yi Rang

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AU - Lee, Jae Bok

AU - Jeon, Cheolho

AU - Choi, Min

AU - Chang, Hyunju

AU - Park, Noejung

AU - Kim, Jung Hwa

AU - Lee, Zonghoon

AU - Song, Wooseok

AU - Myung, Sung

AU - Lee, Sun Sook

AU - An, Ki Seok

AU - Ahn, Jong Hyun

AU - Lim, Jongsun

N1 - Funding Information: This research was supported by a grant (2011-0031636) from the Center for Advanced Soft Electronics under the Global Frontier Research Program funded by the Ministry of Science, ICT and Future Planning, Korea. C.J. was supported by the grant (10063400) through the Korea Evaluation Institute of Industrial Technology (KEIT) funded by the Ministry of Trade, Industry and Energy, Korea. J.H.K and Z.L. were supported by IBS-R019-D1 (Institute for Basic Science, Korea). Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/7/19

Y1 - 2019/7/19

N2 - Despite many encouraging properties of transition metal dichalcogenides (TMDs), a central challenge in the realm of industrial applications based on TMD materials is to connect the large-scale synthesis and reproducible production of highly crystalline TMD materials. Here, the primary aim is to resolve simultaneously the two inversely related issues through the synthesis of MoS2(1−x)Se2x ternary alloys with customizable bichalcogen atomic (S and Se) ratio via atomic-level substitution combined with a solution-based large-area compatible approach. The relative concentration of bichalcogen atoms in the 2D alloy can be effectively modulated by altering the selenization temperature, resulting in 4 in. scale production of MoS1.62Se0.38, MoS1.37Se0.63, MoS1.15Se0.85, and MoS0.46Se1.54 alloys, as well as MoS2 and MoSe2. Comprehensive spectroscopic evaluations for vertical and lateral homogeneity in terms of heteroatom distribution in the large-scale 2D TMD alloys are implemented. Se-stimulated strain effects and a detailed mechanism for the Se substitution in the MoS2 crystal are further explored. Finally, the capability of the 2D alloy for industrial application in nanophotonic devices and hydrogen evolution reaction (HER) catalysts is validated. Substantial enhancements in the optoelectronic and HER performances of the 2D ternary alloy compared with those of its binary counterparts, including pure-phase MoS2 and MoSe2, are unambiguously achieved.

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Atomic-Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications

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