Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process

Sanghun Lee; Seunggi Seo; Wontae Noh; Il Kwon Oh; Hyungjun Kim

doi:10.1109/IITC51362.2021.9537517

Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process

Sanghun Lee, Seunggi Seo, Wontae Noh, Il Kwon Oh, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We develop the atomic layer deposition (ALD) process of titanium silicate with halide-free precursor and evaluate film properties as a spacer for self-aligned double/quadruple patterning (SADP/SAQP). Growth characteristics are investigated depending on substrate temperature. Growth per cycle (GPC) at 100 °C is largely observed than the estimated value, while that as 200 °C shows an opposite trend. There have been reports on ALD ternary oxides, but different growth characteristics observed in this work have not been fully understood. In this work, the growth behavior of ALD titanium silicate are studied by correlating different characterization results, including infrared spectra, chemical compositions, and X-ray reflection spectra. Correlative results suggest that the surface density of hydroxyl group would be a key role for different growth characteristics of titanium silicates. Also, the feasibility of ALD titanium silicate as a spacer is evaluated, such as etch rates and deposited titanium silicates shows better quality than a conventional SiO2 spacer. This study on ALD titanium silicate should significantly expand multi-patterning applications, especially in a semiconductor field.

Original language	English
Title of host publication	2021 IEEE International Interconnect Technology Conference, IITC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728176321
DOIs	https://doi.org/10.1109/IITC51362.2021.9537517
Publication status	Published - 2021 Jul 6
Event	24th Annual IEEE International Interconnect Technology Conference, IITC 2021 - Virtual, Kyoto, Japan Duration: 2021 Jul 6 → 2021 Jul 9

Publication series

Name	2021 IEEE International Interconnect Technology Conference, IITC 2021

Conference

Conference	24th Annual IEEE International Interconnect Technology Conference, IITC 2021
Country/Territory	Japan
City	Virtual, Kyoto
Period	21/7/6 → 21/7/9

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/IITC51362.2021.9537517

Cite this

Lee, S., Seo, S., Noh, W., Oh, I. K., & Kim, H. (2021). Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process. In 2021 IEEE International Interconnect Technology Conference, IITC 2021 (2021 IEEE International Interconnect Technology Conference, IITC 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC51362.2021.9537517

@inproceedings{18c9f9126c50401fb8748bd17c46a84d,

title = "Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process",

abstract = "We develop the atomic layer deposition (ALD) process of titanium silicate with halide-free precursor and evaluate film properties as a spacer for self-aligned double/quadruple patterning (SADP/SAQP). Growth characteristics are investigated depending on substrate temperature. Growth per cycle (GPC) at 100 °C is largely observed than the estimated value, while that as 200 °C shows an opposite trend. There have been reports on ALD ternary oxides, but different growth characteristics observed in this work have not been fully understood. In this work, the growth behavior of ALD titanium silicate are studied by correlating different characterization results, including infrared spectra, chemical compositions, and X-ray reflection spectra. Correlative results suggest that the surface density of hydroxyl group would be a key role for different growth characteristics of titanium silicates. Also, the feasibility of ALD titanium silicate as a spacer is evaluated, such as etch rates and deposited titanium silicates shows better quality than a conventional SiO2 spacer. This study on ALD titanium silicate should significantly expand multi-patterning applications, especially in a semiconductor field.",

keywords = "ALD supercycle, Atomic Layer Deposition (ALD), Growth characteristics, SADP/SAQP, Titanium silicate",

author = "Sanghun Lee and Seunggi Seo and Wontae Noh and Oh, {Il Kwon} and Hyungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 24th Annual IEEE International Interconnect Technology Conference, IITC 2021 ; Conference date: 06-07-2021 Through 09-07-2021",

year = "2021",

month = jul,

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doi = "10.1109/IITC51362.2021.9537517",

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Lee, S, Seo, S, Noh, W, Oh, IK & Kim, H 2021, Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process. in 2021 IEEE International Interconnect Technology Conference, IITC 2021. 2021 IEEE International Interconnect Technology Conference, IITC 2021, Institute of Electrical and Electronics Engineers Inc., 24th Annual IEEE International Interconnect Technology Conference, IITC 2021, Virtual, Kyoto, Japan, 21/7/6. https://doi.org/10.1109/IITC51362.2021.9537517

Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process. / Lee, Sanghun; Seo, Seunggi; Noh, Wontae et al.
2021 IEEE International Interconnect Technology Conference, IITC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Interconnect Technology Conference, IITC 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process

AU - Lee, Sanghun

AU - Seo, Seunggi

AU - Noh, Wontae

AU - Oh, Il Kwon

AU - Kim, Hyungjun

PY - 2021/7/6

Y1 - 2021/7/6

N2 - We develop the atomic layer deposition (ALD) process of titanium silicate with halide-free precursor and evaluate film properties as a spacer for self-aligned double/quadruple patterning (SADP/SAQP). Growth characteristics are investigated depending on substrate temperature. Growth per cycle (GPC) at 100 °C is largely observed than the estimated value, while that as 200 °C shows an opposite trend. There have been reports on ALD ternary oxides, but different growth characteristics observed in this work have not been fully understood. In this work, the growth behavior of ALD titanium silicate are studied by correlating different characterization results, including infrared spectra, chemical compositions, and X-ray reflection spectra. Correlative results suggest that the surface density of hydroxyl group would be a key role for different growth characteristics of titanium silicates. Also, the feasibility of ALD titanium silicate as a spacer is evaluated, such as etch rates and deposited titanium silicates shows better quality than a conventional SiO2 spacer. This study on ALD titanium silicate should significantly expand multi-patterning applications, especially in a semiconductor field.

AB - We develop the atomic layer deposition (ALD) process of titanium silicate with halide-free precursor and evaluate film properties as a spacer for self-aligned double/quadruple patterning (SADP/SAQP). Growth characteristics are investigated depending on substrate temperature. Growth per cycle (GPC) at 100 °C is largely observed than the estimated value, while that as 200 °C shows an opposite trend. There have been reports on ALD ternary oxides, but different growth characteristics observed in this work have not been fully understood. In this work, the growth behavior of ALD titanium silicate are studied by correlating different characterization results, including infrared spectra, chemical compositions, and X-ray reflection spectra. Correlative results suggest that the surface density of hydroxyl group would be a key role for different growth characteristics of titanium silicates. Also, the feasibility of ALD titanium silicate as a spacer is evaluated, such as etch rates and deposited titanium silicates shows better quality than a conventional SiO2 spacer. This study on ALD titanium silicate should significantly expand multi-patterning applications, especially in a semiconductor field.

KW - ALD supercycle

KW - Atomic Layer Deposition (ALD)

KW - Growth characteristics

KW - SADP/SAQP

KW - Titanium silicate

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T3 - 2021 IEEE International Interconnect Technology Conference, IITC 2021

BT - 2021 IEEE International Interconnect Technology Conference, IITC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th Annual IEEE International Interconnect Technology Conference, IITC 2021

Y2 - 6 July 2021 through 9 July 2021

ER -

Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process

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