Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants

W. J. Maeng; Sang Joon Park; H. Kim

doi:10.1116/1.2345205

Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants

W. J. Maeng, Sang Joon Park, H. Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe ₂)₅, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH₃, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH₃ and H plasma, the films were contaminated by considerable amount of carbon, while the Ta₂O ₅ deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta ₂O₅ except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.

Original language	English
Pages (from-to)	2276-2281
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	5
DOIs	https://doi.org/10.1116/1.2345205
Publication status	Published - 2006

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-003-D00144 and KRF-2006-311-D00114). The authors are deeply thankful to Professor Wang Chul Zin and his co-workers at POSTECH for their contributions in measuring film thickness by ellipsometry. The RBS analysis was performed at Korea Institute of Science and Technology.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.2345205

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@article{e16dddf38a5244d5b286d7a05bb4abb6,

title = "Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants",

abstract = "The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe 2)5, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH3, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta2O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2O5 except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.",

author = "Maeng, {W. J.} and Park, {Sang Joon} and H. Kim",

note = "Funding Information: This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-003-D00144 and KRF-2006-311-D00114). The authors are deeply thankful to Professor Wang Chul Zin and his co-workers at POSTECH for their contributions in measuring film thickness by ellipsometry. The RBS analysis was performed at Korea Institute of Science and Technology.",

year = "2006",

doi = "10.1116/1.2345205",

language = "English",

volume = "24",

pages = "2276--2281",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "5",

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T1 - Atomic layer deposition of Ta-based thin films

T2 - Reactions of alkylamide precursor with various reactants

AU - Maeng, W. J.

AU - Park, Sang Joon

AU - Kim, H.

N1 - Funding Information: This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-003-D00144 and KRF-2006-311-D00114). The authors are deeply thankful to Professor Wang Chul Zin and his co-workers at POSTECH for their contributions in measuring film thickness by ellipsometry. The RBS analysis was performed at Korea Institute of Science and Technology.

PY - 2006

Y1 - 2006

N2 - The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe 2)5, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH3, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta2O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2O5 except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.

AB - The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe 2)5, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH3, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta2O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2O5 except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.

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IS - 5

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Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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