Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants

W. J. Maeng, Sang Joon Park, H. Kim

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24 Citations (Scopus)


The growth mechanisms and film properties of atomic layer deposition (ALD) Ta-based thin films were investigated from alkylamide precursor [Ta(NMe 2)5, (PDMAT)]. The reactions of PDMAT with various reactants including water, NH3, oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta2O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2O5 except at high deposition temperature over 300 °C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.

Original languageEnglish
Pages (from-to)2276-2281
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number5
Publication statusPublished - 2006

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant funded by Korea Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-003-D00144 and KRF-2006-311-D00114). The authors are deeply thankful to Professor Wang Chul Zin and his co-workers at POSTECH for their contributions in measuring film thickness by ellipsometry. The RBS analysis was performed at Korea Institute of Science and Technology.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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