Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)2 precursor and oxygen gas

Woo Hee Kim; Sang Joon Park; Do Young Kim; Hyungjun Kim

doi:10.3938/jkps.55.32

Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)₂ precursor and oxygen gas

Woo Hee Kim, Sang Joon Park, Do Young Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

In this study, the growth characteristics and the film properties of Ru and RuO₂ thin films were systematically investigated, focusing on the effects of the oxygen exposure and the growth temperature. Pure Ru thin films with low resistivity were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)₂] as a Ru precursor and oxygen (O₂) as a reactant by using thermal atomic layer deposition (ALD). Phase change from Ru to RuO₂ was observed by controlling the growth parameters, including the O₂ flow rate and the growth temperature. In order to investigate the dependence of the phase change on the deposition parameters, we evaluated the crystalline structure and the chemical composition by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).

Original language	English
Pages (from-to)	32-37
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	1
DOIs	https://doi.org/10.3938/jkps.55.32
Publication status	Published - 2009 Jul

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.3938/jkps.55.32

Cite this

@article{bf7eac78d426461e82b73cc33655c571,

title = "Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)2 precursor and oxygen gas",

abstract = "In this study, the growth characteristics and the film properties of Ru and RuO2 thin films were systematically investigated, focusing on the effects of the oxygen exposure and the growth temperature. Pure Ru thin films with low resistivity were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a Ru precursor and oxygen (O2) as a reactant by using thermal atomic layer deposition (ALD). Phase change from Ru to RuO2 was observed by controlling the growth parameters, including the O2 flow rate and the growth temperature. In order to investigate the dependence of the phase change on the deposition parameters, we evaluated the crystalline structure and the chemical composition by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).",

author = "Kim, {Woo Hee} and Park, {Sang Joon} and Kim, {Do Young} and Hyungjun Kim",

year = "2009",

month = jul,

doi = "10.3938/jkps.55.32",

language = "English",

volume = "55",

pages = "32--37",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

TY - JOUR

T1 - Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)2 precursor and oxygen gas

AU - Kim, Woo Hee

AU - Park, Sang Joon

AU - Kim, Do Young

AU - Kim, Hyungjun

PY - 2009/7

Y1 - 2009/7

N2 - In this study, the growth characteristics and the film properties of Ru and RuO2 thin films were systematically investigated, focusing on the effects of the oxygen exposure and the growth temperature. Pure Ru thin films with low resistivity were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a Ru precursor and oxygen (O2) as a reactant by using thermal atomic layer deposition (ALD). Phase change from Ru to RuO2 was observed by controlling the growth parameters, including the O2 flow rate and the growth temperature. In order to investigate the dependence of the phase change on the deposition parameters, we evaluated the crystalline structure and the chemical composition by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).

AB - In this study, the growth characteristics and the film properties of Ru and RuO2 thin films were systematically investigated, focusing on the effects of the oxygen exposure and the growth temperature. Pure Ru thin films with low resistivity were deposited from bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a Ru precursor and oxygen (O2) as a reactant by using thermal atomic layer deposition (ALD). Phase change from Ru to RuO2 was observed by controlling the growth parameters, including the O2 flow rate and the growth temperature. In order to investigate the dependence of the phase change on the deposition parameters, we evaluated the crystalline structure and the chemical composition by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS).

UR - http://www.scopus.com/inward/record.url?scp=69249164104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69249164104&partnerID=8YFLogxK

U2 - 10.3938/jkps.55.32

DO - 10.3938/jkps.55.32

M3 - Article

AN - SCOPUS:69249164104

SN - 0374-4884

VL - 55

SP - 32

EP - 37

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)₂ precursor and oxygen gas

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this