Atomic layer deposition of Ni thin films and application to area-selective deposition

Woo Hee Kim, Han Bo Ram Lee, Kwang Heo, Young Kuk Lee, Taek Mo Chung, Chang Gyoun Kim, Seunghun Hong, Jong Heo, Hyungjun Kim

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77 Citations (Scopus)


Ni thin films were deposited by atomic layer deposition (ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni (dmamb)2] as a precursor and N H3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated. Low-resistivity films were deposited on Si and Si O2 substrates, producing high-purity Ni films with a small amount of oxygen and negligible amounts of nitrogen and carbon. Additionally, ALD Ni showed excellent conformality in nanoscale via holes. Utilizing this conformality, Ni/Si core/shell nanowires with uniform diameters were fabricated. By combining ALD Ni with octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer, area-selective ALD was conducted for selective deposition of Ni films. When performed on the prepatterned OTS substrate, the Ni films were selectively coated only on OTS-free regions, building up Ni line patterns with 3 μm width. Electrical measurement results showed that all of the Ni lines were electrically isolated, also indicating the selective Ni deposition.

Original languageEnglish
Pages (from-to)D1-D5
JournalJournal of the Electrochemical Society
Issue number1
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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