Atomic-layer deposition of crystalline BeO on SiC

Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Weijie Wang, Jae Hyun Ryou, Hyun Seop Kim, Ho Young Cha, Jungwoo Oh

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14 Citations (Scopus)


For the first time, an epitaxial beryllium oxide (BeO) film was grown on 4H silicon carbide (4H-SiC) by atomic layer deposition (ALD) at a low temperature of 250 °C. The BeO film had a large lattice mismatch with the substrate (>7–8%), but it was successfully grown to a single crystal by domain-matching epitaxy (DME). The bandgap energy, dielectric constant, and thermal conductivity properties of crystalline BeO are suitable for power transistors that require low leakage currents and fast heat dissipation in high electric fields. Physical characterization confirmed the single-crystalline BeO (0 0 2). Raman analysis showed that the E 1 and A 1 phonon modes of ALD BeO were intermixed with the E 2 and A 1 phonon modes of SiC, resulting in a significant increase in phonon intensity. After heat treatment at a high temperature, a small amount of SiO 2 interfacial oxide was formed but the stoichiometry of BeO was maintained. From the capacitance-voltage (C-V) curves, we obtained a dielectric constant of 6.9 and calculated a low interface trap density of 6 × 10 10 cm −2 ·eV −1 using the Terman method at E c -E t = 0.6 eV. The high bandgap, thermal conductivity, and excellent crystallinity reduced the dangling bonds at the interface of BeO-on-SiC.

Original languageEnglish
Pages (from-to)634-640
Number of pages7
JournalApplied Surface Science
Publication statusPublished - 2019 Mar 1

Bibliographical note

Publisher Copyright:
© 2018 Elsevier B.V.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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