Atomic layer deposition of Co using N2H2 plasma as a reactant

Jaehong Yoon, Han Bo Ram Lee, Doyoung Kim, Taehoon Cheon, Soo Hyun Kim, Hyungjun Kim

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33 Citations (Scopus)


Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N2H2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N2H2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N2 flow ratio, the resistivity decreased reaching minimum value at fN2H2 0.25 ∼ 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N2 or H2 plasma, films with very high sheet resistance over 1 Msq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM).

Original languageEnglish
Pages (from-to)H1179-H1182
JournalJournal of the Electrochemical Society
Issue number11
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


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