With continuous shrinking of devices in accordance with Moore's law, metal-semiconductor resistivity starts playing an important role for device performance. To meet ITRS target of 10-9 Ω·cm2 by 2023, it is important to evaluate the effect of different device parameters such as doping concentration, Schottky barrier height, strain and SiGe mole fraction on contact resistivity. In this work, such a resistivity study has been done on Si/SiGe PMOS contacts through 10-band atomistic tight binding quantum transport simulations. Optimum target values for barrier height as a function of doping concentration are obtained.
|Title of host publication||2017 IEEE 17th International Conference on Nanotechnology, NANO 2017|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||2|
|Publication status||Published - 2017 Nov 21|
|Event||17th IEEE International Conference on Nanotechnology, NANO 2017 - Pittsburgh, United States|
Duration: 2017 Jul 25 → 2017 Jul 28
|Name||2017 IEEE 17th International Conference on Nanotechnology, NANO 2017|
|Conference||17th IEEE International Conference on Nanotechnology, NANO 2017|
|Period||17/7/25 → 17/7/28|
Bibliographical noteFunding Information:
This work was supported by the Intel Corporation. We acknowledge the Rosen Center for Advanced Computing at Purdue University for the use of their computing resources and technical support. This work is also part of the Accelerating Nano-scale Transistor Innovation with NEMO5 on Blue Waters PRAC allocation support by the National Science Foundation (award number OCI-0832623).
© 2017 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering