Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10-9 Ω·cm? target?

Prasad Sarangapani; Cory Weber; Jiwon Chang; Stephen Cea; Roksana Golizadeh-Mojarad; Michael Povolotskyi; Gerhard Klimeck; Tillmann Kubis

doi:10.1109/NANO.2017.8117314

Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10^-9 Ω·cm? target?

Prasad Sarangapani, Cory Weber, Jiwon Chang, Stephen Cea, Roksana Golizadeh-Mojarad, Michael Povolotskyi, Gerhard Klimeck, Tillmann Kubis

School of System & Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

With continuous shrinking of devices in accordance with Moore's law, metal-semiconductor resistivity starts playing an important role for device performance. To meet ITRS target of 10^-9 Ω·cm² by 2023, it is important to evaluate the effect of different device parameters such as doping concentration, Schottky barrier height, strain and SiGe mole fraction on contact resistivity. In this work, such a resistivity study has been done on Si/SiGe PMOS contacts through 10-band atomistic tight binding quantum transport simulations. Optimum target values for barrier height as a function of doping concentration are obtained.

Original language	English
Title of host publication	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	83-84
Number of pages	2
ISBN (Electronic)	9781509030286
DOIs	https://doi.org/10.1109/NANO.2017.8117314
Publication status	Published - 2017 Nov 21
Event	17th IEEE International Conference on Nanotechnology, NANO 2017 - Pittsburgh, United States Duration: 2017 Jul 25 → 2017 Jul 28

Publication series

Name	2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

Conference

Conference	17th IEEE International Conference on Nanotechnology, NANO 2017
Country/Territory	United States
City	Pittsburgh
Period	17/7/25 → 17/7/28

Bibliographical note

Funding Information:
This work was supported by the Intel Corporation. We acknowledge the Rosen Center for Advanced Computing at Purdue University for the use of their computing resources and technical support. This work is also part of the Accelerating Nano-scale Transistor Innovation with NEMO5 on Blue Waters PRAC allocation support by the National Science Foundation (award number OCI-0832623).

Publisher Copyright:
© 2017 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1109/NANO.2017.8117314

Cite this

Sarangapani, P., Weber, C., Chang, J., Cea, S., Golizadeh-Mojarad, R., Povolotskyi, M., Klimeck, G., & Kubis, T. (2017). Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10^-9 Ω·cm? target? In 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017 (pp. 83-84). Article 8117314 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2017.8117314

Sarangapani, Prasad ; Weber, Cory ; Chang, Jiwon et al. / Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations : Can we achieve the 10^-9 Ω·cm? target?. 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 83-84 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017).

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abstract = "With continuous shrinking of devices in accordance with Moore's law, metal-semiconductor resistivity starts playing an important role for device performance. To meet ITRS target of 10-9 Ω·cm2 by 2023, it is important to evaluate the effect of different device parameters such as doping concentration, Schottky barrier height, strain and SiGe mole fraction on contact resistivity. In this work, such a resistivity study has been done on Si/SiGe PMOS contacts through 10-band atomistic tight binding quantum transport simulations. Optimum target values for barrier height as a function of doping concentration are obtained.",

author = "Prasad Sarangapani and Cory Weber and Jiwon Chang and Stephen Cea and Roksana Golizadeh-Mojarad and Michael Povolotskyi and Gerhard Klimeck and Tillmann Kubis",

note = "Funding Information: This work was supported by the Intel Corporation. We acknowledge the Rosen Center for Advanced Computing at Purdue University for the use of their computing resources and technical support. This work is also part of the Accelerating Nano-scale Transistor Innovation with NEMO5 on Blue Waters PRAC allocation support by the National Science Foundation (award number OCI-0832623). Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th IEEE International Conference on Nanotechnology, NANO 2017 ; Conference date: 25-07-2017 Through 28-07-2017",

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Sarangapani, P, Weber, C, Chang, J, Cea, S, Golizadeh-Mojarad, R, Povolotskyi, M, Klimeck, G & Kubis, T 2017, Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10^-9 Ω·cm? target? in 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017., 8117314, 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017, Institute of Electrical and Electronics Engineers Inc., pp. 83-84, 17th IEEE International Conference on Nanotechnology, NANO 2017, Pittsburgh, United States, 17/7/25. https://doi.org/10.1109/NANO.2017.8117314

Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10^-9 Ω·cm? target? / Sarangapani, Prasad; Weber, Cory; Chang, Jiwon et al.
2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 83-84 8117314 (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - With continuous shrinking of devices in accordance with Moore's law, metal-semiconductor resistivity starts playing an important role for device performance. To meet ITRS target of 10-9 Ω·cm2 by 2023, it is important to evaluate the effect of different device parameters such as doping concentration, Schottky barrier height, strain and SiGe mole fraction on contact resistivity. In this work, such a resistivity study has been done on Si/SiGe PMOS contacts through 10-band atomistic tight binding quantum transport simulations. Optimum target values for barrier height as a function of doping concentration are obtained.

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Sarangapani P, Weber C, Chang J, Cea S, Golizadeh-Mojarad R, Povolotskyi M et al. Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10^-9 Ω·cm? target? In 2017 IEEE 17th International Conference on Nanotechnology, NANO 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 83-84. 8117314. (2017 IEEE 17th International Conference on Nanotechnology, NANO 2017). doi: 10.1109/NANO.2017.8117314