Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors

Si Joon Kim; Byeonghoon Kim; Joohye Jung; Doo Hyun Yoon; Junwye Lee; Sung Ha Park; Hyun Jae Kim

doi:10.1063/1.3692587

Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors

Si Joon Kim, Byeonghoon Kim, Joohye Jung, Doo Hyun Yoon, Junwye Lee, Sung Ha Park, Hyun Jae Kim

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect mobility ( _FET) of 0.07 cm ²/Vs and an on-current (I _on) value of about 2.68 A. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in _FET (0.02 cm ²/Vs) and I _on (0.247 A) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.

Original language	English
Article number	103702
Journal	Applied Physics Letters
Volume	100
Issue number	10
DOIs	https://doi.org/10.1063/1.3692587
Publication status	Published - 2012 Mar 5

Bibliographical note

Funding Information:
This work was supported by Hi Seoul Science (Humanities) Fellowship funded by Seoul Scholarship Foundation and the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) [No. 2011-0028819].

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors",

abstract = "A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect mobility ( FET) of 0.07 cm 2/Vs and an on-current (I on) value of about 2.68 A. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in FET (0.02 cm 2/Vs) and I on (0.247 A) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.",

author = "Kim, {Si Joon} and Byeonghoon Kim and Joohye Jung and Yoon, {Doo Hyun} and Junwye Lee and Park, {Sung Ha} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by Hi Seoul Science (Humanities) Fellowship funded by Seoul Scholarship Foundation and the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) [No. 2011-0028819].",

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AU - Kim, Si Joon

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AU - Jung, Joohye

AU - Yoon, Doo Hyun

AU - Lee, Junwye

AU - Park, Sung Ha

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by Hi Seoul Science (Humanities) Fellowship funded by Seoul Scholarship Foundation and the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST) [No. 2011-0028819].

PY - 2012/3/5

Y1 - 2012/3/5

N2 - A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect mobility ( FET) of 0.07 cm 2/Vs and an on-current (I on) value of about 2.68 A. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in FET (0.02 cm 2/Vs) and I on (0.247 A) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.

AB - A method for detecting artificial DNA using solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) was developed. The IGZO TFT had a field-effect mobility ( FET) of 0.07 cm 2/Vs and an on-current (I on) value of about 2.68 A. A dry-wet method was employed to immobilize double-crossover (DX) DNA onto the IGZO surface. After DX DNA immobilization, significant decreases in FET (0.02 cm 2/Vs) and I on (0.247 A) and a positive shift of threshold voltage were observed. These results were attributed to the negatively charged phosphate groups on the DNA backbone, which generated electrostatic interactions in the TFT device.

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Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors

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