Arsenic doping of ZnO nanowires by post-annealing treatment

Woong Lee, Min Chang Jeong, Sang Woo Joo, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


Arsenic doping of ZnO nanowires for building blocks of potential nanoscale photonic devices is reported. It was demonstrated in high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy that arsenic could be doped into the substitutional sites in ZnO lattice by post-annealing samples grown on GaAs substrates without degradation of the crystalline and optical qualities. In a series of photoluminescence (PL) spectroscopy observations, arsenic-doped ZnO nanowires exhibited emission due to acceptor-bound excitons at room temperature. The observed emission characteristics implied that the dopant arsenic formed a hydrogen-like acceptor, suggesting the feasibility of producing possibly p-type ZnO nanowires via a simple route.

Original languageEnglish
Pages (from-to)764-768
Number of pages5
Issue number6
Publication statusPublished - 2005 Jun 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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