Abstract
Flip chip bonding technique using Pb/In solder bumps was applied to packaging a 10 Gbps laser diode (LD) submodule for high-speed optical communication systems. Dependence of parasitic parameters on the small signal modulation bandwidth of the LD submodule was investigated through SPICE simulations. Experimentally, a small signal modulation bandwidth of 14 GHz at 100 mA dc bias current and the clean modulation response up to 20 GHz were obtained in the flip-chip bonded LD submodule, which was wider than that of the wire-bonded 10 Gbps LD submodule by a difference of 3.8 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 872-875 |
| Number of pages | 4 |
| Journal | Proceedings - Electronic Components and Technology Conference |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA Duration: 1995 May 21 → 1995 May 24 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering