Application of SiO2 aerogel film with low dielectric constant to intermetal dielectrics

Moon Ho Jo; Jung Kyun Hong; Hyung Ho Park; Joong Jung Kim; Sang Hoon Hyun; Se Young Choi

doi:10.1016/S0040-6090(97)00437-9

Application of SiO₂ aerogel film with low dielectric constant to intermetal dielectrics

Moon Ho Jo, Jung Kyun Hong, Hyung Ho Park, Joong Jung Kim, Sang Hoon Hyun, Se Young Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

SiO₂ aerogel film was characterized from its structural and chemical viewpoints. High porosity of material was measured and compared to thermally grown SiO₂ film by Rutherford backscattering spectrometer (RBS). Porous film nature was re-evaluated as enhanced etch rate with high density CHF₃-plasma. Detailed observation of microstructure revealed that constituent particles of which the size is in the diameter range of 10-30 nm are cross-linked to build up the skeletal network. Large interior surface coverage, such as alkoxyl group and hydroxyl group were investigated using X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared spectroscopy (FT-IR) for their chemical states. The improved electrical properties of SiO₂ aerogel after annealing at 450°C were interrelated with the thermal evolution of these surface species, where surface alkoxyl plays the dominant role over surface hydroxyl. Furthermore, good gap-filling and planarization ability on 0.8 μm line and space trench as other requirements for intermetal dielectric application was demonstrated.

Original language	English
Pages (from-to)	490-494
Number of pages	5
Journal	Thin Solid Films
Volume	308-309
Issue number	1-4
DOIs	https://doi.org/10.1016/S0040-6090(97)00437-9
Publication status	Published - 1997 Oct 31

Bibliographical note

Funding Information:
The authors wish to express that this research was performed under the financial support of the Electronics and Telecommunications Research Institute (ETRI) in Korea under contract No. 96398.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(97)00437-9

Cite this

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title = "Application of SiO2 aerogel film with low dielectric constant to intermetal dielectrics",

abstract = "SiO2 aerogel film was characterized from its structural and chemical viewpoints. High porosity of material was measured and compared to thermally grown SiO2 film by Rutherford backscattering spectrometer (RBS). Porous film nature was re-evaluated as enhanced etch rate with high density CHF3-plasma. Detailed observation of microstructure revealed that constituent particles of which the size is in the diameter range of 10-30 nm are cross-linked to build up the skeletal network. Large interior surface coverage, such as alkoxyl group and hydroxyl group were investigated using X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared spectroscopy (FT-IR) for their chemical states. The improved electrical properties of SiO2 aerogel after annealing at 450°C were interrelated with the thermal evolution of these surface species, where surface alkoxyl plays the dominant role over surface hydroxyl. Furthermore, good gap-filling and planarization ability on 0.8 μm line and space trench as other requirements for intermetal dielectric application was demonstrated.",

author = "Jo, {Moon Ho} and Hong, {Jung Kyun} and Park, {Hyung Ho} and Kim, {Joong Jung} and Hyun, {Sang Hoon} and Choi, {Se Young}",

note = "Funding Information: The authors wish to express that this research was performed under the financial support of the Electronics and Telecommunications Research Institute (ETRI) in Korea under contract No. 96398.",

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AU - Hong, Jung Kyun

AU - Park, Hyung Ho

AU - Kim, Joong Jung

AU - Hyun, Sang Hoon

AU - Choi, Se Young

N1 - Funding Information: The authors wish to express that this research was performed under the financial support of the Electronics and Telecommunications Research Institute (ETRI) in Korea under contract No. 96398.

PY - 1997/10/31

Y1 - 1997/10/31

N2 - SiO2 aerogel film was characterized from its structural and chemical viewpoints. High porosity of material was measured and compared to thermally grown SiO2 film by Rutherford backscattering spectrometer (RBS). Porous film nature was re-evaluated as enhanced etch rate with high density CHF3-plasma. Detailed observation of microstructure revealed that constituent particles of which the size is in the diameter range of 10-30 nm are cross-linked to build up the skeletal network. Large interior surface coverage, such as alkoxyl group and hydroxyl group were investigated using X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared spectroscopy (FT-IR) for their chemical states. The improved electrical properties of SiO2 aerogel after annealing at 450°C were interrelated with the thermal evolution of these surface species, where surface alkoxyl plays the dominant role over surface hydroxyl. Furthermore, good gap-filling and planarization ability on 0.8 μm line and space trench as other requirements for intermetal dielectric application was demonstrated.

AB - SiO2 aerogel film was characterized from its structural and chemical viewpoints. High porosity of material was measured and compared to thermally grown SiO2 film by Rutherford backscattering spectrometer (RBS). Porous film nature was re-evaluated as enhanced etch rate with high density CHF3-plasma. Detailed observation of microstructure revealed that constituent particles of which the size is in the diameter range of 10-30 nm are cross-linked to build up the skeletal network. Large interior surface coverage, such as alkoxyl group and hydroxyl group were investigated using X-ray photoelectron spectroscopy (XPS) and Fourier transformed infrared spectroscopy (FT-IR) for their chemical states. The improved electrical properties of SiO2 aerogel after annealing at 450°C were interrelated with the thermal evolution of these surface species, where surface alkoxyl plays the dominant role over surface hydroxyl. Furthermore, good gap-filling and planarization ability on 0.8 μm line and space trench as other requirements for intermetal dielectric application was demonstrated.

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