Application of red light-emitting diodes using Mg3.5Ge 1.25O6:Mn4+ phosphor

Seung Jae Lee; Jongjin Jung; Ja Young Park; Hye Mi Jang; Yong Rok Kim; Joung Kyu Park

doi:10.1016/j.matlet.2013.08.098

Application of red light-emitting diodes using Mg_3.5Ge _1.25O₆:Mn⁴⁺ phosphor

Seung Jae Lee, Jongjin Jung, Ja Young Park, Hye Mi Jang, Yong Rok Kim, Joung Kyu Park

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Mg_3.5Ge_1.25O₆:Mn⁴⁺ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the ²E→⁴A₂ transition of Mn⁴⁺ (λ_ex=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λ_em=405 nm) and Mg_3.5Ge_1.25O ₆:Mn⁴⁺ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.

Original language	English
Pages (from-to)	108-111
Number of pages	4
Journal	Materials Letters
Volume	111
DOIs	https://doi.org/10.1016/j.matlet.2013.08.098
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work is supported by Korea Research Council for Industrial Science and Technology ( SI-1308 ) and the Korean Ministry of Science and Technology ( KK-1307-B6 ). This work is also supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning ( 2013009204 ).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2013.08.098

Cite this

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title = "Application of red light-emitting diodes using Mg3.5Ge 1.25O6:Mn4+ phosphor",

abstract = "Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the 2E→4A2 transition of Mn4+ (λex=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem=405 nm) and Mg3.5Ge1.25O 6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.",

author = "Lee, {Seung Jae} and Jongjin Jung and Park, {Ja Young} and Jang, {Hye Mi} and Kim, {Yong Rok} and Park, {Joung Kyu}",

note = "Funding Information: This work is supported by Korea Research Council for Industrial Science and Technology ( SI-1308 ) and the Korean Ministry of Science and Technology ( KK-1307-B6 ). This work is also supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning ( 2013009204 ).",

year = "2013",

doi = "10.1016/j.matlet.2013.08.098",

language = "English",

volume = "111",

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journal = "Materials Letters",

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T1 - Application of red light-emitting diodes using Mg3.5Ge 1.25O6:Mn4+ phosphor

AU - Lee, Seung Jae

AU - Jung, Jongjin

AU - Park, Ja Young

AU - Jang, Hye Mi

AU - Kim, Yong Rok

AU - Park, Joung Kyu

N1 - Funding Information: This work is supported by Korea Research Council for Industrial Science and Technology ( SI-1308 ) and the Korean Ministry of Science and Technology ( KK-1307-B6 ). This work is also supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning ( 2013009204 ).

PY - 2013

Y1 - 2013

N2 - Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the 2E→4A2 transition of Mn4+ (λex=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem=405 nm) and Mg3.5Ge1.25O 6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.

AB - Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700 nm with two clear peaks at 632 and 660 nm and two obscure peaks at 626 and 653 nm due to the 2E→4A2 transition of Mn4+ (λex=405 nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem=405 nm) and Mg3.5Ge1.25O 6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900 K.

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