Annealing effects of aluminum silicate films grown on Si(100)

M. H. Cho; Y. S. Rho; H. J. Choi; S. W. Nam; D. H. Ko; J. H. Ku; H. C. Kang; D. Y. Noh; C. N. Whang; K. Jeong

doi:10.1116/1.1472422

Annealing effects of aluminum silicate films grown on Si(100)

M. H. Cho, Y. S. Rho, H. J. Choi, S. W. Nam, D. H. Ko, J. H. Ku, H. C. Kang, D. Y. Noh, C. N. Whang, K. Jeong

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The physical and electrical characteristics of Al silicate film were studied depending on the annealing temperature. The structure of the film was changed from amorphous to crystalline structure as postannealing temperature increases. The interfacial layer thickness and the stoichiometry at the interfacial region significantly influenced the electrical properties such as trap charge densities and conduction process.

Original language	English
Pages (from-to)	865-872
Number of pages	8
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1472422
Publication status	Published - 2002

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "The physical and electrical characteristics of Al silicate film were studied depending on the annealing temperature. The structure of the film was changed from amorphous to crystalline structure as postannealing temperature increases. The interfacial layer thickness and the stoichiometry at the interfacial region significantly influenced the electrical properties such as trap charge densities and conduction process.",

author = "Cho, {M. H.} and Rho, {Y. S.} and Choi, {H. J.} and Nam, {S. W.} and Ko, {D. H.} and Ku, {J. H.} and Kang, {H. C.} and Noh, {D. Y.} and Whang, {C. N.} and K. Jeong",

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AU - Cho, M. H.

AU - Rho, Y. S.

AU - Choi, H. J.

AU - Nam, S. W.

AU - Ko, D. H.

AU - Ku, J. H.

AU - Kang, H. C.

AU - Noh, D. Y.

AU - Whang, C. N.

AU - Jeong, K.

PY - 2002

Y1 - 2002

N2 - The physical and electrical characteristics of Al silicate film were studied depending on the annealing temperature. The structure of the film was changed from amorphous to crystalline structure as postannealing temperature increases. The interfacial layer thickness and the stoichiometry at the interfacial region significantly influenced the electrical properties such as trap charge densities and conduction process.

AB - The physical and electrical characteristics of Al silicate film were studied depending on the annealing temperature. The structure of the film was changed from amorphous to crystalline structure as postannealing temperature increases. The interfacial layer thickness and the stoichiometry at the interfacial region significantly influenced the electrical properties such as trap charge densities and conduction process.

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DO - 10.1116/1.1472422

M3 - Article

AN - SCOPUS:0036565032

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JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 3

ER -

Annealing effects of aluminum silicate films grown on Si(100)

Abstract

All Science Journal Classification (ASJC) codes

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