Abstract
II-VI semiconducting ZnO thin films have been fabricated by pulsed laser deposition (PLD) process on indium phosphide (InP) (100) substrates. Thin films were annealed at various temperatures in order to study the annealing temperature dependence of the structural and optical properties of ZnO thin film grown on InP substrate. The structural and optical properties were characterized with X-ray diffraction (XRD) and photoluminescence (PL), respectively. In our study, we have found some defect levels from the PL spectra and derived the defect center's activation energy. According to XRD data, it could be thought that the films had some strains but relaxed by annealing processes.
| Original language | English |
|---|---|
| Pages (from-to) | 366-369 |
| Number of pages | 4 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 102 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2003 Sept 15 |
| Event | E-MRS 2002 Symposium E - Strasbourg, France Duration: 2002 Jun 18 → 2002 Jun 21 |
Bibliographical note
Funding Information:This work was supported by Korean Research Foundation Grant (KRF-2001-041-E00152).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering