Annealing behavior of Pd/GaN (0001) microstructure

C. C. Kim; J. H. Je; D. W. Kim; H. K. Baik; S. M. Lee; Pierre Ruterana

doi:10.1016/S0921-5107(00)00761-3

Annealing behavior of Pd/GaN (0001) microstructure

C. C. Kim, J. H. Je, D. W. Kim, H. K. Baik, S. M. Lee, Pierre Ruterana

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga₂Pd₅ and Ga₅Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.

Original language	English
Pages (from-to)	105-107
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	82
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00761-3
Publication status	Published - 2001 May 22

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(00)00761-3

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abstract = "We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.",

author = "Kim, {C. C.} and Je, {J. H.} and Kim, {D. W.} and Baik, {H. K.} and Lee, {S. M.} and Pierre Ruterana",

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AU - Kim, C. C.

AU - Je, J. H.

AU - Kim, D. W.

AU - Baik, H. K.

AU - Lee, S. M.

AU - Ruterana, Pierre

PY - 2001/5/22

Y1 - 2001/5/22

N2 - We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.

AB - We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.

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JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Annealing behavior of Pd/GaN (0001) microstructure

Abstract

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