Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

Yong Hyeon Shin; Sungwoo Weon; Daesik Hong; Ilgu Yun

doi:10.1109/TED.2017.2664825

Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

Yong Hyeon Shin, Sungwoo Weon, Daesik Hong, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young's approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green's function, the potential distribution (φ (x,y)) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localized trap charges and macroscopic analysis. Using the calculated φ (x, y), I_DS and V_th are solved analytically with respect to various L and t_ox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results.

Original language	English
Article number	7859381
Pages (from-to)	1433-1440
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	4
DOIs	https://doi.org/10.1109/TED.2017.2664825
Publication status	Published - 2017 Apr

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2017.2664825

Cite this

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abstract = "An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young's approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green's function, the potential distribution (φ (x,y)) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localized trap charges and macroscopic analysis. Using the calculated φ (x, y), IDS and Vth are solved analytically with respect to various L and tox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results.",

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Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

Abstract

Bibliographical note

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