Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

S. J. Kang; Y. Yi; C. Y. Kim; C. N. Whang; T. A. Callcott; K. Krochak; A. Moewes; G. S. Chang

doi:10.1063/1.1944900

Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

S. J. Kang, Y. Yi, C. Y. Kim, C. N. Whang, T. A. Callcott, K. Krochak, A. Moewes, G. S. Chang

Department of Physics

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2 Citations (Scopus)

Abstract

The effect of octadecyltrichlorosilane (OTS) treatment on the electronic properties of organic thin-film transistors is investigated using soft x-ray absorption and emission spectroscopy. Analysis of Carbon Kα x-ray emission spectra reveals that treating the SiO2 layer with OTS prior to pentacene deposition increases the number of π -bonding states in the active pentacene layer, which is strongly correlated with the conduction of charge carriers. The role of the increased π -bonding states is verified by measuring the current-voltage characteristics of pentacene thin-film transistors with and without OTS treatment. Drain current and field-effect mobility of OTS-treated samples are significantly enhanced as anticipated from the spectroscopic analysis.

Original language	English
Article number	232103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	23
DOIs	https://doi.org/10.1063/1.1944900
Publication status	Published - 2005 Jun 6

Bibliographical note

Funding Information:
This work is supported by BK21 project of the Korea Research Foundation, the Yonsei Center for Nano Technology, grants from the Natural Science and Engineering Research Council of Canada (NSERC), and the Saskatchewan Synchrotron Institute.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1944900

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@article{3947c42d11f24133b83b8d8f973442a8,

title = "Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy",

abstract = "The effect of octadecyltrichlorosilane (OTS) treatment on the electronic properties of organic thin-film transistors is investigated using soft x-ray absorption and emission spectroscopy. Analysis of Carbon Kα x-ray emission spectra reveals that treating the SiO2 layer with OTS prior to pentacene deposition increases the number of π -bonding states in the active pentacene layer, which is strongly correlated with the conduction of charge carriers. The role of the increased π -bonding states is verified by measuring the current-voltage characteristics of pentacene thin-film transistors with and without OTS treatment. Drain current and field-effect mobility of OTS-treated samples are significantly enhanced as anticipated from the spectroscopic analysis.",

author = "Kang, {S. J.} and Y. Yi and Kim, {C. Y.} and Whang, {C. N.} and Callcott, {T. A.} and K. Krochak and A. Moewes and Chang, {G. S.}",

note = "Funding Information: This work is supported by BK21 project of the Korea Research Foundation, the Yonsei Center for Nano Technology, grants from the Natural Science and Engineering Research Council of Canada (NSERC), and the Saskatchewan Synchrotron Institute.",

year = "2005",

month = jun,

day = "6",

doi = "10.1063/1.1944900",

language = "English",

volume = "86",

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journal = "Applied Physics Letters",

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T1 - Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

AU - Kang, S. J.

AU - Yi, Y.

AU - Kim, C. Y.

AU - Whang, C. N.

AU - Callcott, T. A.

AU - Krochak, K.

AU - Moewes, A.

AU - Chang, G. S.

N1 - Funding Information: This work is supported by BK21 project of the Korea Research Foundation, the Yonsei Center for Nano Technology, grants from the Natural Science and Engineering Research Council of Canada (NSERC), and the Saskatchewan Synchrotron Institute.

PY - 2005/6/6

Y1 - 2005/6/6

N2 - The effect of octadecyltrichlorosilane (OTS) treatment on the electronic properties of organic thin-film transistors is investigated using soft x-ray absorption and emission spectroscopy. Analysis of Carbon Kα x-ray emission spectra reveals that treating the SiO2 layer with OTS prior to pentacene deposition increases the number of π -bonding states in the active pentacene layer, which is strongly correlated with the conduction of charge carriers. The role of the increased π -bonding states is verified by measuring the current-voltage characteristics of pentacene thin-film transistors with and without OTS treatment. Drain current and field-effect mobility of OTS-treated samples are significantly enhanced as anticipated from the spectroscopic analysis.

AB - The effect of octadecyltrichlorosilane (OTS) treatment on the electronic properties of organic thin-film transistors is investigated using soft x-ray absorption and emission spectroscopy. Analysis of Carbon Kα x-ray emission spectra reveals that treating the SiO2 layer with OTS prior to pentacene deposition increases the number of π -bonding states in the active pentacene layer, which is strongly correlated with the conduction of charge carriers. The role of the increased π -bonding states is verified by measuring the current-voltage characteristics of pentacene thin-film transistors with and without OTS treatment. Drain current and field-effect mobility of OTS-treated samples are significantly enhanced as anticipated from the spectroscopic analysis.

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DO - 10.1063/1.1944900

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232103

ER -

Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

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