Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory

Jun Yeong Lim, Pyung Moon, Sang Myung Lee, Keum Whan Noh, Tae Un Youn, Jong Wook Kim, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


In the current memory market, many researchers have analyzed the data retention characteristic and predicted the related leakage mechanism. Most studies have shown that the dominant degradation of retention characteristics of Flash memory occurs in the tunneling oxide after program/erase cycling. However, serious degradation of the retention characteristics is also seen in the intrinsic situation before program/erase cycling of devices through the oxide-nitride-oxide (ONO) interpoly dielectric. In this paper, we analyze that degradation by examining the various charge loss mechanisms of the device before cycling and extract two appropriate charge loss mechanisms by comparing the measured V-th data with the TCAD simulation data, and we verify the mechanisms by extracting the activation energy of each mechanism. We also analyze the effects on those two mechanisms as the ONO thickness and temperature are changed. Based on the results, we establish the intrinsic leakage mechanism through the ONO layers and predict the change in leakage mechanism as the thickness of the ONO layers is decreased.

Original languageEnglish
Article number7112489
Pages (from-to)319-325
Number of pages7
JournalIEEE Transactions on Device and Materials Reliability
Issue number3
Publication statusPublished - 2015 Sept 1

Bibliographical note

Publisher Copyright:
© 2001-2011 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering


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