An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

Jong Su Kim; Beom Joon Kim; Young Jin Choi; Moo Hyung Lee; Moon Sung Kang; Jeong Ho Cho

doi:10.1002/adma.201505378

An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

Jong Su Kim, Beom Joon Kim, Young Jin Choi, Moo Hyung Lee, Moon Sung Kang, Jeong Ho Cho

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Original language	English
Pages (from-to)	4803-4810
Number of pages	8
Journal	Advanced Materials
Volume	28
Issue number	24
DOIs	https://doi.org/10.1002/adma.201505378
Publication status	Published - 2016 Jun

Bibliographical note

Funding Information:
This work was supported by a grant from the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177) and Basic Science Research Program(2014R1A1A2058531)of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, Korea.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201505378

Cite this

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title = "An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes",

author = "Kim, {Jong Su} and Kim, {Beom Joon} and Choi, {Young Jin} and Lee, {Moo Hyung} and Kang, {Moon Sung} and Cho, {Jeong Ho}",

note = "Funding Information: This work was supported by a grant from the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177) and Basic Science Research Program(2014R1A1A2058531)of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, Korea.",

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AU - Choi, Young Jin

AU - Lee, Moo Hyung

AU - Kang, Moon Sung

AU - Cho, Jeong Ho

N1 - Funding Information: This work was supported by a grant from the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (NRF-2013M3A6A5073177) and Basic Science Research Program(2014R1A1A2058531)of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, Korea.

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An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

Bibliographical note

All Science Journal Classification (ASJC) codes

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