An offset-tolerant dual-reference-voltage sensing scheme for deep submicrometer STT-RAM

Taehui Na, Jisu Kim, Byungkyu Song, Jung Pill Kim, Seung H. Kang, Seong Ook Jung

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Due to the increased process variation and reduced supply voltage in deep submicrometer technology nodes, an offset-tolerant sensing scheme has become essential. However, most offset-tolerant sensing schemes suffer from inherent performance degradation owing to multiple-stage sensing. In this paper, a dual Vref sensing scheme (DVSS) that selectively uses an optimal Vref between Vref+ and Vref- is proposed. This scheme is tolerant to process variations, and can be used as a spin-transfer-torque random access memory. Because of no additional sensing stage, the offset-tolerant sensing is achieved without sacrificing the performance. The optimal Vref is selected after fabrication, and the calibrated switch control bit, which contains Vref selection information, is stored permanently in an on-chip nonvolatile latch. Monte Carlo HSPICE simulation results, using an industry-compatible 45-nm model parameters, show that the proposed DVSS achieves a read yield of 98.24% for 32 Mb (6.1 sigma) with 2× faster sensing speed and 1.5× lower read energy per bit compared with the state-of-the-art offset-tolerant sensing scheme.

Original languageEnglish
Article number7194850
Pages (from-to)1361-1370
Number of pages10
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Issue number4
Publication statusPublished - 2016 Apr

Bibliographical note

Publisher Copyright:
© 1993-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering


Dive into the research topics of 'An offset-tolerant dual-reference-voltage sensing scheme for deep submicrometer STT-RAM'. Together they form a unique fingerprint.

Cite this