An I/Q-channel time-interleaved bandpass sigma-delta modulator for a low-IF receiver

Minho Kwon; Gunhee Han

doi:10.1109/TCSII.2006.888726

An I/Q-channel time-interleaved bandpass sigma-delta modulator for a low-IF receiver

Minho Kwon, Gunhee Han

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This brief proposes a multiplexing scheme to realize an I/Q-channel time-interleaved (TI) bandpass sigma-delta modulator that shares operational transconductance amplifiers to minimize power consumption and silicon area for a low-intermediate-frequency (IF) wireless receiver. The test chip was fabricated for a 10.7-MHz IF system with a 0.35-μm CMOS process. The measured peak signal-to-noise distortion ratio for a 200-kHz bandwidth is approximately 73 dB. The power consumption of the fabricated chip is 61 mW with a 3.3-V supply, and the silicon area is 1.78 mm². The measured channel crosstalk is about —48 dB.

Original language	English
Pages (from-to)	252-256
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	54
Issue number	3
DOIs	https://doi.org/10.1109/TCSII.2006.888726
Publication status	Published - 2007 Mar 7

Bibliographical note

Funding Information:
Manuscript received June 30, 2006; revised September 16, 2006. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center Support Program supervised by the Institute of Information Technology Advancement. This paper was recommended by Associate Editor M. Delgado-Restituto.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/TCSII.2006.888726

Cite this

@article{14589ffea90943df9c210b53cc62de61,

title = "An I/Q-channel time-interleaved bandpass sigma-delta modulator for a low-IF receiver",

abstract = "This brief proposes a multiplexing scheme to realize an I/Q-channel time-interleaved (TI) bandpass sigma-delta modulator that shares operational transconductance amplifiers to minimize power consumption and silicon area for a low-intermediate-frequency (IF) wireless receiver. The test chip was fabricated for a 10.7-MHz IF system with a 0.35-μm CMOS process. The measured peak signal-to-noise distortion ratio for a 200-kHz bandwidth is approximately 73 dB. The power consumption of the fabricated chip is 61 mW with a 3.3-V supply, and the silicon area is 1.78 mm2. The measured channel crosstalk is about —48 dB.",

author = "Minho Kwon and Gunhee Han",

note = "Funding Information: Manuscript received June 30, 2006; revised September 16, 2006. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center Support Program supervised by the Institute of Information Technology Advancement. This paper was recommended by Associate Editor M. Delgado-Restituto.",

year = "2007",

month = mar,

day = "7",

doi = "10.1109/TCSII.2006.888726",

language = "English",

volume = "54",

pages = "252--256",

journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",

issn = "1549-7747",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - An I/Q-channel time-interleaved bandpass sigma-delta modulator for a low-IF receiver

AU - Kwon, Minho

AU - Han, Gunhee

N1 - Funding Information: Manuscript received June 30, 2006; revised September 16, 2006. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center Support Program supervised by the Institute of Information Technology Advancement. This paper was recommended by Associate Editor M. Delgado-Restituto.

PY - 2007/3/7

Y1 - 2007/3/7

N2 - This brief proposes a multiplexing scheme to realize an I/Q-channel time-interleaved (TI) bandpass sigma-delta modulator that shares operational transconductance amplifiers to minimize power consumption and silicon area for a low-intermediate-frequency (IF) wireless receiver. The test chip was fabricated for a 10.7-MHz IF system with a 0.35-μm CMOS process. The measured peak signal-to-noise distortion ratio for a 200-kHz bandwidth is approximately 73 dB. The power consumption of the fabricated chip is 61 mW with a 3.3-V supply, and the silicon area is 1.78 mm2. The measured channel crosstalk is about —48 dB.

AB - This brief proposes a multiplexing scheme to realize an I/Q-channel time-interleaved (TI) bandpass sigma-delta modulator that shares operational transconductance amplifiers to minimize power consumption and silicon area for a low-intermediate-frequency (IF) wireless receiver. The test chip was fabricated for a 10.7-MHz IF system with a 0.35-μm CMOS process. The measured peak signal-to-noise distortion ratio for a 200-kHz bandwidth is approximately 73 dB. The power consumption of the fabricated chip is 61 mW with a 3.3-V supply, and the silicon area is 1.78 mm2. The measured channel crosstalk is about —48 dB.

UR - http://www.scopus.com/inward/record.url?scp=34147149524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34147149524&partnerID=8YFLogxK

U2 - 10.1109/TCSII.2006.888726

DO - 10.1109/TCSII.2006.888726

M3 - Article

AN - SCOPUS:34147149524

SN - 1549-7747

VL - 54

SP - 252

EP - 256

JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

IS - 3

ER -

An I/Q-channel time-interleaved bandpass sigma-delta modulator for a low-IF receiver

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this