An interference on SiGe 5GHz VCOS integrated with inductors using low-k BCB dielectric

J. Y. Lee, J. H. Kim, S. S. Moon, I. H. Kim, Y. H. Lee, J. K. Yook, K. Chun

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

In this paper, we integrated the MEMS inductor placed on BCB with SiGe 5 GHz VCO and investigated the interference on VCO performance by varying the height of BCB and the position of MEMS inductor on a core VCO circuit. The performance of 5 GHz VCOs fabricated by IBM SiGe process with SiGe inductor and MEMS inductor was compared. The phase noise of VCO with MEMS inductor was lower than that of VCO with SiGe by 5 dBc at 100 kHz offset and the output power was higher by 6 dBm. The VCO with inductor placed on BCB with more height and the VCO with inductor that is not positioned above active area showed better characteristics.

Original languageEnglish
PagesD151-D154
Publication statusPublished - 2004
EventIEEE TENCON 2004 - 2004 IEEE Region 10 Conference: Analog and Digital Techniques in Electrical Engineering - Chiang Mai, Thailand
Duration: 2004 Nov 212004 Nov 24

Conference

ConferenceIEEE TENCON 2004 - 2004 IEEE Region 10 Conference: Analog and Digital Techniques in Electrical Engineering
Country/TerritoryThailand
CityChiang Mai
Period04/11/2104/11/24

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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