An in-plane GaAs single-electron memory cell operating at 77 K

K. H. Yoo; J. W. Park; Kim Jinhee; K. S. Park; S. C. Oh; J. O. Lee; J. J. Kim; J. B. Choi; J. J. Lee

doi:10.1063/1.123761

An in-plane GaAs single-electron memory cell operating at 77 K

K. H. Yoo, J. W. Park, Kim Jinhee, K. S. Park, S. C. Oh, J. O. Lee, J. J. Kim, J. B. Choi, J. J. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

Original language	English
Pages (from-to)	2073-2075
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	14
DOIs	https://doi.org/10.1063/1.123761
Publication status	Published - 1999 Apr 5

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.123761

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abstract = "An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.",

author = "Yoo, {K. H.} and Park, {J. W.} and Kim Jinhee and Park, {K. S.} and Oh, {S. C.} and Lee, {J. O.} and Kim, {J. J.} and Choi, {J. B.} and Lee, {J. J.}",

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AU - Park, J. W.

AU - Jinhee, Kim

AU - Park, K. S.

AU - Oh, S. C.

AU - Lee, J. O.

AU - Kim, J. J.

AU - Choi, J. B.

AU - Lee, J. J.

PY - 1999/4/5

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N2 - An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

AB - An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

An in-plane GaAs single-electron memory cell operating at 77 K

Abstract

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