An analytical avalanche breakdown model for double gate MOSFET

Edward Namkyu Cho, Yong Hyeon Shin, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (μeff) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson's equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (ΔL). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model.

Original languageEnglish
Pages (from-to)38-41
Number of pages4
JournalMicroelectronics Reliability
Issue number1
Publication statusPublished - 2015 Jan 1

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT . [10039174, Technology Development of 22-nm level Foundry Devices and PDK].

Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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