An analytical avalanche breakdown model for double gate MOSFET

Edward Namkyu Cho; Yong Hyeon Shin; Ilgu Yun

doi:10.1016/j.microrel.2014.08.019

An analytical avalanche breakdown model for double gate MOSFET

Edward Namkyu Cho, Yong Hyeon Shin, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (μ_eff) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson's equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (ΔL). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model.

Original language	English
Pages (from-to)	38-41
Number of pages	4
Journal	Microelectronics Reliability
Volume	55
Issue number	1
DOIs	https://doi.org/10.1016/j.microrel.2014.08.019
Publication status	Published - 2015 Jan 1

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT . [10039174, Technology Development of 22-nm level Foundry Devices and PDK].

Publisher Copyright:
© 2014 Elsevier Ltd. All rights reserved.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2014.08.019

Cite this

@article{5e7ad5e3335e472d8f8607cc547662eb,

title = "An analytical avalanche breakdown model for double gate MOSFET",

abstract = "An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (μeff) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson's equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (ΔL). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model.",

author = "Cho, {Edward Namkyu} and Shin, {Yong Hyeon} and Ilgu Yun",

note = "Funding Information: This work was supported by the IT R&D program of MKE/KEIT . [10039174, Technology Development of 22-nm level Foundry Devices and PDK]. Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd. All rights reserved.",

year = "2015",

month = jan,

day = "1",

doi = "10.1016/j.microrel.2014.08.019",

language = "English",

volume = "55",

pages = "38--41",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - An analytical avalanche breakdown model for double gate MOSFET

AU - Cho, Edward Namkyu

AU - Shin, Yong Hyeon

AU - Yun, Ilgu

N1 - Funding Information: This work was supported by the IT R&D program of MKE/KEIT . [10039174, Technology Development of 22-nm level Foundry Devices and PDK]. Publisher Copyright: © 2014 Elsevier Ltd. All rights reserved.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (μeff) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson's equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (ΔL). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model.

AB - An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (μeff) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson's equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (ΔL). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model.

UR - http://www.scopus.com/inward/record.url?scp=84920521135&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84920521135&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2014.08.019

DO - 10.1016/j.microrel.2014.08.019

M3 - Article

AN - SCOPUS:84920521135

SN - 0026-2714

VL - 55

SP - 38

EP - 41

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 1

ER -

An analytical avalanche breakdown model for double gate MOSFET

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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