An analysis of imprinted hysteresis loops for a ferroelectric Pb (Zr,Ti) O3 thin film capacitor using the switching transient current measurements

Gun Hwan Kim, Hyun Ju Lee, An Quan Jiang, Min Hyuk Park, Cheol Seong Hwang

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10 Citations (Scopus)

Abstract

This study examined the imprint mechanism of a ferroelectric Pt/Pb (Zr,Ti) O3 (150-nm-thick) /Pt capacitor using pulse switching transient current measurements. The progression of the imprint was well explained by the propagation of a localized charge injection area, where there was an increase in coercive voltage and interfacial capacitance over the entire capacitor area. The as-received samples exhibited uniform interfacial capacitance over the total area. Charge injection resulted in a more rectified remanent polarization-applied voltage relationship compared with the as-received sample. Analytic functional forms for the switching charge and local switching area were also derived.

Original languageEnglish
Article number044106
JournalJournal of Applied Physics
Volume105
Issue number4
DOIs
Publication statusPublished - 2009

Bibliographical note

Funding Information:
The study was supported by the National Program for 0.1Terabit NVM Devices of Korean Government.

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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