Amorphous Ta-nanocrystalline RuO_x diffusion barrier for lower electrode of high density memory devices

The effects of the amount of RuO₂ added in the Ta film on the electrical properties of a Ta-RuO₂ diffusion barrier were investigated using n⁺⁺-poly-Si substrate at a temperature range of 650-800°C. For the Ta layer prepared without RuO₂ addition, Ta₂O₅ phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO₂ incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO₂ crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemically strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO₂ added. Since a kinetic barrier for nucleation in formation of the crystalline Ta₂O₅ phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO₂ phase from nanocrystalline RuO_x phase, the formation of the RuO₂ phase by reaction between the indiffused oxygen and the RuO_x nanocrystallites is kinetically more favorable than that of Ta₂O₅ phase.