Amorphous phase formation in an as-deposited platinum-GaAs interface

Dae Hong Ko; Robert Sinclair

doi:10.1063/1.105077

Amorphous phase formation in an as-deposited platinum-GaAs interface

Dae Hong Ko, Robert Sinclair

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The presence of a thin amorphous intermixed layer at the platinum-GaAs interface in as-deposited Pt/GaAs and Si/Pt/GaAs samples has been investigated via high-resolution electron microscopy, microdiffraction, and energy dispersive spectroscopy. The intermixed layer forms below the native oxide of the GaAs substrate and consists of three elements, platinum, gallium, and arsenic. We suggest that this layer forms during the deposition process of the platinum.

Original language	English
Pages (from-to)	1851-1853
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	17
DOIs	https://doi.org/10.1063/1.105077
Publication status	Published - 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.105077

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title = "Amorphous phase formation in an as-deposited platinum-GaAs interface",

abstract = "The presence of a thin amorphous intermixed layer at the platinum-GaAs interface in as-deposited Pt/GaAs and Si/Pt/GaAs samples has been investigated via high-resolution electron microscopy, microdiffraction, and energy dispersive spectroscopy. The intermixed layer forms below the native oxide of the GaAs substrate and consists of three elements, platinum, gallium, and arsenic. We suggest that this layer forms during the deposition process of the platinum.",

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N2 - The presence of a thin amorphous intermixed layer at the platinum-GaAs interface in as-deposited Pt/GaAs and Si/Pt/GaAs samples has been investigated via high-resolution electron microscopy, microdiffraction, and energy dispersive spectroscopy. The intermixed layer forms below the native oxide of the GaAs substrate and consists of three elements, platinum, gallium, and arsenic. We suggest that this layer forms during the deposition process of the platinum.

AB - The presence of a thin amorphous intermixed layer at the platinum-GaAs interface in as-deposited Pt/GaAs and Si/Pt/GaAs samples has been investigated via high-resolution electron microscopy, microdiffraction, and energy dispersive spectroscopy. The intermixed layer forms below the native oxide of the GaAs substrate and consists of three elements, platinum, gallium, and arsenic. We suggest that this layer forms during the deposition process of the platinum.

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JF - Applied Physics Letters

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ER -

Amorphous phase formation in an as-deposited platinum-GaAs interface

Abstract

All Science Journal Classification (ASJC) codes

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