All graphene-based thin film transistors on flexible plastic substrates

Seoung Ki Lee, Ho Young Jang, Sukjae Jang, Euiyoung Choi, Byung Hee Hong, Jaichan Lee, Sungho Park, Jong Hyun Ahn

Research output: Contribution to journalArticlepeer-review

224 Citations (Scopus)


High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm 2), breakdown bias (1.5 × 10 6 V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm 2/(V·s), respectively, at a drain bias of -0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.

Original languageEnglish
Pages (from-to)3472-3476
Number of pages5
JournalNano letters
Issue number7
Publication statusPublished - 2012 Jul 11

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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