Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

Si Yun Park; Kyongjun Kim; Keon Hee Lim; Eungkyu Lee; Seonjo Kim; Hyungjun Kim; Youn Sang Kim

doi:10.1039/c3ra42784f

Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

Si Yun Park, Kyongjun Kim, Keon Hee Lim, Eungkyu Lee, Seonjo Kim, Hyungjun Kim, Youn Sang Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We introduce high performance, low-temperature (<300 °C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm² V^-1 s^-1 and an on/off current ratio of 10⁷. The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.

Original language	English
Pages (from-to)	21339-21342
Number of pages	4
Journal	RSC Advances
Volume	3
Issue number	44
DOIs	https://doi.org/10.1039/c3ra42784f
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)

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10.1039/c3ra42784f

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abstract = "We introduce high performance, low-temperature (<300 °C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm2 V-1 s-1 and an on/off current ratio of 107. The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.",

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AU - Park, Si Yun

AU - Kim, Kyongjun

AU - Lim, Keon Hee

AU - Lee, Eungkyu

AU - Kim, Seonjo

AU - Kim, Hyungjun

AU - Kim, Youn Sang

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N2 - We introduce high performance, low-temperature (<300 °C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm2 V-1 s-1 and an on/off current ratio of 107. The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.

AB - We introduce high performance, low-temperature (<300 °C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm2 V-1 s-1 and an on/off current ratio of 107. The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.

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Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

Abstract

All Science Journal Classification (ASJC) codes

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