Alignment of liquid crystals on solution-processed HfZnO films via ion beam irradiation

Hong Gyu Park; Sang Bok Jang; Hae Chang Jeong; Jin Woo Lee; Dae Shik Seo

doi:10.1080/02678292.2015.1012754

Alignment of liquid crystals on solution-processed HfZnO films via ion beam irradiation

Hong Gyu Park, Sang Bok Jang, Hae Chang Jeong, Jin Woo Lee, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Liquid crystal (LC) alignment layers were prepared by fabricating solution-processed HfZnO films, annealing them, and treating them with ion beam (IB) irradiation, and the effect of annealing temperature upon the resulting film properties was studied. Homogeneous LC alignment was achieved on IB-irradiated HfZnO films. Topographical changes were observed from field-emission scanning electron microscopy as annealing temperature increased. X-ray photoelectron spectroscopy analysis showed that IB irradiation resulted in oxidation of HfZnO surfaces, which caused the LCs to be oriented more uniformly. The best electro-optical characteristics observed corresponded to the annealing temperature of 200°C. The low optimal annealing temperature for fabricating the HfZnO films suggested that this material has remarkable potential for LCD applications.

Original language	English
Pages (from-to)	998-1002
Number of pages	5
Journal	Liquid Crystals
Volume	42
Issue number	7
DOIs	https://doi.org/10.1080/02678292.2015.1012754
Publication status	Published - 2015 Jul 3

Bibliographical note

Publisher Copyright:
© 2015 Taylor & Francis.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1080/02678292.2015.1012754

Cite this

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title = "Alignment of liquid crystals on solution-processed HfZnO films via ion beam irradiation",

abstract = "Liquid crystal (LC) alignment layers were prepared by fabricating solution-processed HfZnO films, annealing them, and treating them with ion beam (IB) irradiation, and the effect of annealing temperature upon the resulting film properties was studied. Homogeneous LC alignment was achieved on IB-irradiated HfZnO films. Topographical changes were observed from field-emission scanning electron microscopy as annealing temperature increased. X-ray photoelectron spectroscopy analysis showed that IB irradiation resulted in oxidation of HfZnO surfaces, which caused the LCs to be oriented more uniformly. The best electro-optical characteristics observed corresponded to the annealing temperature of 200°C. The low optimal annealing temperature for fabricating the HfZnO films suggested that this material has remarkable potential for LCD applications.",

author = "Park, {Hong Gyu} and Jang, {Sang Bok} and Jeong, {Hae Chang} and Lee, {Jin Woo} and Seo, {Dae Shik}",

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doi = "10.1080/02678292.2015.1012754",

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T1 - Alignment of liquid crystals on solution-processed HfZnO films via ion beam irradiation

AU - Park, Hong Gyu

AU - Jang, Sang Bok

AU - Jeong, Hae Chang

AU - Lee, Jin Woo

AU - Seo, Dae Shik

PY - 2015/7/3

Y1 - 2015/7/3

N2 - Liquid crystal (LC) alignment layers were prepared by fabricating solution-processed HfZnO films, annealing them, and treating them with ion beam (IB) irradiation, and the effect of annealing temperature upon the resulting film properties was studied. Homogeneous LC alignment was achieved on IB-irradiated HfZnO films. Topographical changes were observed from field-emission scanning electron microscopy as annealing temperature increased. X-ray photoelectron spectroscopy analysis showed that IB irradiation resulted in oxidation of HfZnO surfaces, which caused the LCs to be oriented more uniformly. The best electro-optical characteristics observed corresponded to the annealing temperature of 200°C. The low optimal annealing temperature for fabricating the HfZnO films suggested that this material has remarkable potential for LCD applications.

AB - Liquid crystal (LC) alignment layers were prepared by fabricating solution-processed HfZnO films, annealing them, and treating them with ion beam (IB) irradiation, and the effect of annealing temperature upon the resulting film properties was studied. Homogeneous LC alignment was achieved on IB-irradiated HfZnO films. Topographical changes were observed from field-emission scanning electron microscopy as annealing temperature increased. X-ray photoelectron spectroscopy analysis showed that IB irradiation resulted in oxidation of HfZnO surfaces, which caused the LCs to be oriented more uniformly. The best electro-optical characteristics observed corresponded to the annealing temperature of 200°C. The low optimal annealing temperature for fabricating the HfZnO films suggested that this material has remarkable potential for LCD applications.

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Alignment of liquid crystals on solution-processed HfZnO films via ion beam irradiation

Abstract

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