Alignment effects for nematic liquid crystal using a-C:H thin film as working gas at bias condition

J. Y. Hwang; C. J. Park; D. S. Seo; H. J. Ahn; K. C. Kim; H. K. Baik

doi:10.1080/00150190490454378

Alignment effects for nematic liquid crystal using a-C:H thin film as working gas at bias condition

J. Y. Hwang, C. J. Park, D. S. Seo, H. J. Ahn, K. C. Kim, H. K. Baik

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30 W rf bias condition. A high pretilt angle by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250°C, and the alignment defect was observed above annealing temperature of 300°C.

Original language	English
Pages (from-to)	31-34
Number of pages	4
Journal	Ferroelectrics
Volume	304
DOIs	https://doi.org/10.1080/00150190490454378
Publication status	Published - 2004 Jan 1

Bibliographical note

Funding Information:
This work was supported by National Research Laboratory program (M1-0203-00-0008).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150190490454378

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title = "Alignment effects for nematic liquid crystal using a-C:H thin film as working gas at bias condition",

abstract = "We investigated the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30 W rf bias condition. A high pretilt angle by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250°C, and the alignment defect was observed above annealing temperature of 300°C.",

author = "Hwang, {J. Y.} and Park, {C. J.} and Seo, {D. S.} and Ahn, {H. J.} and Kim, {K. C.} and Baik, {H. K.}",

note = "Funding Information: This work was supported by National Research Laboratory program (M1-0203-00-0008).",

year = "2004",

month = jan,

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doi = "10.1080/00150190490454378",

language = "English",

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journal = "Ferroelectrics",

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T1 - Alignment effects for nematic liquid crystal using a-C:H thin film as working gas at bias condition

AU - Hwang, J. Y.

AU - Park, C. J.

AU - Seo, D. S.

AU - Ahn, H. J.

AU - Kim, K. C.

AU - Baik, H. K.

N1 - Funding Information: This work was supported by National Research Laboratory program (M1-0203-00-0008).

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We investigated the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30 W rf bias condition. A high pretilt angle by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250°C, and the alignment defect was observed above annealing temperature of 300°C.

AB - We investigated the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30 W rf bias condition. A high pretilt angle by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250°C, and the alignment defect was observed above annealing temperature of 300°C.

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JO - Ferroelectrics

JF - Ferroelectrics

ER -

Alignment effects for nematic liquid crystal using a-C:H thin film as working gas at bias condition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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