Al/F codoping effect on the structural, electrical, and optical properties of ZnO films grown via atomic layer deposition

Kyung Mun Kang; Yue Wang; Minjae Kim; Chan Lee; Hyung Ho Park

doi:10.1016/j.apsusc.2020.147734

Al/F codoping effect on the structural, electrical, and optical properties of ZnO films grown via atomic layer deposition

Kyung Mun Kang, Yue Wang, Minjae Kim, Chan Lee, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Aluminum/fluorine-codoped zinc oxide (AFZO) thin films were prepared on silicon and glass substrates through atomic layer deposition at 150 °C. Their structural, electrical, and optical properties were investigated as functions of the F/Al codoping ratio. The X-ray diffraction analysis revealed that the preferred growth orientation changed depending on the codoping with F, that is, from (0 0 0 2) for Al-doped ZnO (AZO) films to (1 0 1 0) for the AFZO ones. The electrical resistivity of the AFZO films (around 5.0 × 10^–4 Ω∙cm) was lower than that of the AZO ones; this was mainly attributed to an increase in the n-type carrier concentration (from 4.11 × 10²⁰ cm³ for AZO to 5.86 × 10²⁰ cm³ for AFZO) due to the substitution of the Zn and O sublattice sites by, respectively, the Al and F atoms. The enhanced carrier concentration affected also the optical property of the AFZO films according to the Moss–Burstein shift. The carrier mobility was similarly improved (from 6.96 cm²/V∙s for AZO to 21.2 cm²/V∙s for AFZO) by the passivation of the oxygen vacancies via the F-doping.

Original language	English
Article number	147734
Journal	Applied Surface Science
Volume	535
DOIs	https://doi.org/10.1016/j.apsusc.2020.147734
Publication status	Published - 2021 Jan 1

Bibliographical note

Funding Information:
This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075 , 'Development of Mott-transition based forming-less non-volatile resistive switching memory & array' and also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604 ). Experiments at PLS were supported in part by MEST and POSTECH.

Funding Information:
This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075, 'Development of Mott-transition based forming-less non-volatile resistive switching memory & array' and also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604). Experiments at PLS were supported in part by MEST and POSTECH.

Publisher Copyright:
© 2020

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2020.147734

Cite this

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title = "Al/F codoping effect on the structural, electrical, and optical properties of ZnO films grown via atomic layer deposition",

abstract = "Aluminum/fluorine-codoped zinc oxide (AFZO) thin films were prepared on silicon and glass substrates through atomic layer deposition at 150 °C. Their structural, electrical, and optical properties were investigated as functions of the F/Al codoping ratio. The X-ray diffraction analysis revealed that the preferred growth orientation changed depending on the codoping with F, that is, from (0 0 0 2) for Al-doped ZnO (AZO) films to (1 0 1 0) for the AFZO ones. The electrical resistivity of the AFZO films (around 5.0 × 10–4 Ω∙cm) was lower than that of the AZO ones; this was mainly attributed to an increase in the n-type carrier concentration (from 4.11 × 1020 cm3 for AZO to 5.86 × 1020 cm3 for AFZO) due to the substitution of the Zn and O sublattice sites by, respectively, the Al and F atoms. The enhanced carrier concentration affected also the optical property of the AFZO films according to the Moss–Burstein shift. The carrier mobility was similarly improved (from 6.96 cm2/V∙s for AZO to 21.2 cm2/V∙s for AFZO) by the passivation of the oxygen vacancies via the F-doping.",

author = "Kang, {Kyung Mun} and Yue Wang and Minjae Kim and Chan Lee and Park, {Hyung Ho}",

note = "Funding Information: This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075 , 'Development of Mott-transition based forming-less non-volatile resistive switching memory & array' and also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604 ). Experiments at PLS were supported in part by MEST and POSTECH. Funding Information: This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075, 'Development of Mott-transition based forming-less non-volatile resistive switching memory & array' and also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604). Experiments at PLS were supported in part by MEST and POSTECH. Publisher Copyright: {\textcopyright} 2020",

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doi = "10.1016/j.apsusc.2020.147734",

language = "English",

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T1 - Al/F codoping effect on the structural, electrical, and optical properties of ZnO films grown via atomic layer deposition

AU - Kang, Kyung Mun

AU - Wang, Yue

AU - Kim, Minjae

AU - Lee, Chan

AU - Park, Hyung Ho

N1 - Funding Information: This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075 , 'Development of Mott-transition based forming-less non-volatile resistive switching memory & array' and also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604 ). Experiments at PLS were supported in part by MEST and POSTECH. Funding Information: This material is based upon work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075, 'Development of Mott-transition based forming-less non-volatile resistive switching memory & array' and also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604). Experiments at PLS were supported in part by MEST and POSTECH. Publisher Copyright: © 2020

PY - 2021/1/1

Y1 - 2021/1/1

N2 - Aluminum/fluorine-codoped zinc oxide (AFZO) thin films were prepared on silicon and glass substrates through atomic layer deposition at 150 °C. Their structural, electrical, and optical properties were investigated as functions of the F/Al codoping ratio. The X-ray diffraction analysis revealed that the preferred growth orientation changed depending on the codoping with F, that is, from (0 0 0 2) for Al-doped ZnO (AZO) films to (1 0 1 0) for the AFZO ones. The electrical resistivity of the AFZO films (around 5.0 × 10–4 Ω∙cm) was lower than that of the AZO ones; this was mainly attributed to an increase in the n-type carrier concentration (from 4.11 × 1020 cm3 for AZO to 5.86 × 1020 cm3 for AFZO) due to the substitution of the Zn and O sublattice sites by, respectively, the Al and F atoms. The enhanced carrier concentration affected also the optical property of the AFZO films according to the Moss–Burstein shift. The carrier mobility was similarly improved (from 6.96 cm2/V∙s for AZO to 21.2 cm2/V∙s for AFZO) by the passivation of the oxygen vacancies via the F-doping.

AB - Aluminum/fluorine-codoped zinc oxide (AFZO) thin films were prepared on silicon and glass substrates through atomic layer deposition at 150 °C. Their structural, electrical, and optical properties were investigated as functions of the F/Al codoping ratio. The X-ray diffraction analysis revealed that the preferred growth orientation changed depending on the codoping with F, that is, from (0 0 0 2) for Al-doped ZnO (AZO) films to (1 0 1 0) for the AFZO ones. The electrical resistivity of the AFZO films (around 5.0 × 10–4 Ω∙cm) was lower than that of the AZO ones; this was mainly attributed to an increase in the n-type carrier concentration (from 4.11 × 1020 cm3 for AZO to 5.86 × 1020 cm3 for AFZO) due to the substitution of the Zn and O sublattice sites by, respectively, the Al and F atoms. The enhanced carrier concentration affected also the optical property of the AFZO films according to the Moss–Burstein shift. The carrier mobility was similarly improved (from 6.96 cm2/V∙s for AZO to 21.2 cm2/V∙s for AFZO) by the passivation of the oxygen vacancies via the F-doping.

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ER -

Al/F codoping effect on the structural, electrical, and optical properties of ZnO films grown via atomic layer deposition

Abstract

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