Al 2O 3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells

Dong Won Kang; Jang Yeon Kwon; Jenny Shim; Heon Min Lee; Min Koo Han

doi:10.1016/j.solmat.2012.02.020

Al ₂O ₃ antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells

Dong Won Kang, Jang Yeon Kwon, Jenny Shim, Heon Min Lee, Min Koo Han

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

An Al ₂O ₃ antireflection layer was placed between a glass substrate and a transparent conducting oxide layer in order to decrease optical reflection in microcrystalline silicon (μc-Si:H) p-i-n solar cells. Optical simulations showed that reflections were decreased by Al ₂O ₃ thin films, these reflections were found to be at a minimum when a 40 nm thick Al ₂O ₃ layer was used. Experimental results demonstrated that the measured reflectance of μc-Si:H solar cells was decreased by employing the proposed 40 nm Al ₂O ₃ in all wavelength regions and the quantum efficiency was also increased. The short-circuit current was increased from 22.7 to 23.5 mA/cm ² without sacrificing open circuit voltage or fill factor. The average efficiency of devices was improved from 6.02% to 6.32% by introducing 40 nm Al ₂O ₃ antireflection layer.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	101
DOIs	https://doi.org/10.1016/j.solmat.2012.02.020
Publication status	Published - 2012 Jun

Bibliographical note

Funding Information:
This work was supported by the Global Leading Technology Program (no. 2011T100100039 ) of the Office of Strategic R&D Planning (OSP) funded by the Ministry of Knowledge Economy, Republic of Korea.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2012.02.020

Cite this

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title = "Al 2O 3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells",

abstract = "An Al 2O 3 antireflection layer was placed between a glass substrate and a transparent conducting oxide layer in order to decrease optical reflection in microcrystalline silicon (μc-Si:H) p-i-n solar cells. Optical simulations showed that reflections were decreased by Al 2O 3 thin films, these reflections were found to be at a minimum when a 40 nm thick Al 2O 3 layer was used. Experimental results demonstrated that the measured reflectance of μc-Si:H solar cells was decreased by employing the proposed 40 nm Al 2O 3 in all wavelength regions and the quantum efficiency was also increased. The short-circuit current was increased from 22.7 to 23.5 mA/cm 2 without sacrificing open circuit voltage or fill factor. The average efficiency of devices was improved from 6.02% to 6.32% by introducing 40 nm Al 2O 3 antireflection layer.",

author = "Kang, {Dong Won} and Kwon, {Jang Yeon} and Jenny Shim and Lee, {Heon Min} and Han, {Min Koo}",

note = "Funding Information: This work was supported by the Global Leading Technology Program (no. 2011T100100039 ) of the Office of Strategic R&D Planning (OSP) funded by the Ministry of Knowledge Economy, Republic of Korea. ",

year = "2012",

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doi = "10.1016/j.solmat.2012.02.020",

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T1 - Al 2O 3 antireflection layer between glass and transparent conducting oxide for enhanced light trapping in microcrystalline silicon thin film solar cells

AU - Kang, Dong Won

AU - Kwon, Jang Yeon

AU - Shim, Jenny

AU - Lee, Heon Min

AU - Han, Min Koo

N1 - Funding Information: This work was supported by the Global Leading Technology Program (no. 2011T100100039 ) of the Office of Strategic R&D Planning (OSP) funded by the Ministry of Knowledge Economy, Republic of Korea.

PY - 2012/6

Y1 - 2012/6

N2 - An Al 2O 3 antireflection layer was placed between a glass substrate and a transparent conducting oxide layer in order to decrease optical reflection in microcrystalline silicon (μc-Si:H) p-i-n solar cells. Optical simulations showed that reflections were decreased by Al 2O 3 thin films, these reflections were found to be at a minimum when a 40 nm thick Al 2O 3 layer was used. Experimental results demonstrated that the measured reflectance of μc-Si:H solar cells was decreased by employing the proposed 40 nm Al 2O 3 in all wavelength regions and the quantum efficiency was also increased. The short-circuit current was increased from 22.7 to 23.5 mA/cm 2 without sacrificing open circuit voltage or fill factor. The average efficiency of devices was improved from 6.02% to 6.32% by introducing 40 nm Al 2O 3 antireflection layer.

AB - An Al 2O 3 antireflection layer was placed between a glass substrate and a transparent conducting oxide layer in order to decrease optical reflection in microcrystalline silicon (μc-Si:H) p-i-n solar cells. Optical simulations showed that reflections were decreased by Al 2O 3 thin films, these reflections were found to be at a minimum when a 40 nm thick Al 2O 3 layer was used. Experimental results demonstrated that the measured reflectance of μc-Si:H solar cells was decreased by employing the proposed 40 nm Al 2O 3 in all wavelength regions and the quantum efficiency was also increased. The short-circuit current was increased from 22.7 to 23.5 mA/cm 2 without sacrificing open circuit voltage or fill factor. The average efficiency of devices was improved from 6.02% to 6.32% by introducing 40 nm Al 2O 3 antireflection layer.

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