Oxidation of Si1-x Gex (x=0.15, 0.3) nanowires was performed to examine the Ge condensation and agglomeration behaviors of the remaining Si1-y Gey (y>x) cores. Si1-x Gex nanowires were grown in a furnace and thermally oxidized. Test results were investigated using transmission electron microscopy analysis. With the increase in oxidation time, Ge condensation occurred, after which Si 1-y Gey cores changed to sphere shapes. The formation of spheres was related to the reduction in the total interfacial energy between the Si1-y Gey core and the outer SiO2 layer.
All Science Journal Classification (ASJC) codes
- General Chemical Engineering
- General Materials Science
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering