AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer

Il Joo Cho; Eun Chul Park; Euisik Yoon

doi:10.1109/IMNC.2000.872729

AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer

Il Joo Cho, Eun Chul Park, Euisik Yoon

Yonsei Advanced Science Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch [1]. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed self-aligned to the p+ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.

Original language	English
Title of host publication	Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	230-231
Number of pages	2
ISBN (Electronic)	4891140046, 9784891140045
DOIs	https://doi.org/10.1109/IMNC.2000.872729
Publication status	Published - 2000
Event	International Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan Duration: 2000 Jul 11 → 2000 Jul 13

Publication series

Name	Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2000
Country/Territory	Japan
City	Tokyo
Period	00/7/11 → 00/7/13

All Science Journal Classification (ASJC) codes

Biotechnology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IMNC.2000.872729

Cite this

Cho, I. J., Park, E. C., & Yoon, E. (2000). AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 230-231). Article 872729 (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872729

Cho, Il Joo ; Park, Eun Chul ; Yoon, Euisik. / AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 230-231 (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000).

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title = "AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer",

abstract = "In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch [1]. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed self-aligned to the p+ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.",

author = "Cho, {Il Joo} and Park, {Eun Chul} and Euisik Yoon",

year = "2000",

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language = "English",

series = "Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000",

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note = "International Microprocesses and Nanotechnology Conference, MNC 2000 ; Conference date: 11-07-2000 Through 13-07-2000",

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Cho, IJ, Park, EC & Yoon, E 2000, AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. in Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000., 872729, Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000, Institute of Electrical and Electronics Engineers Inc., pp. 230-231, International Microprocesses and Nanotechnology Conference, MNC 2000, Tokyo, Japan, 00/7/11. https://doi.org/10.1109/IMNC.2000.872729

AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. / Cho, Il Joo; Park, Eun Chul; Yoon, Euisik.
Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 230-231 872729 (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch [1]. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed self-aligned to the p+ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.

AB - In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch [1]. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed self-aligned to the p+ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.

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Cho IJ, Park EC, Yoon E. AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 230-231. 872729. (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000). doi: 10.1109/IMNC.2000.872729

AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer

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