Advantages of NiOx electrode over Au in low-voltage tetracene-based phototransistors

Jeong M. Choi; Kimoon Lee; D. K. Hwang; Jae Hoon Kim; Seongil Im; Ji Hoon Park; Eugene Kim

doi:10.1063/1.2396712

Advantages of NiO_x electrode over Au in low-voltage tetracene-based phototransistors

Jeong M. Choi, Kimoon Lee, D. K. Hwang, Jae Hoon Kim, Seongil Im, Ji Hoon Park, Eugene Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report on the tetracene-based photo-thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenol (PVP)/aluminum oxide (Al Ox) bilayer for a gate dielectric and two different source/drain (SD) electrodes: semitransparent Ni Ox and Au. Our tetracene-based TFT with Ni Ox SD electrode exhibited quite good field effect mobility (μ=∼0.23 cm2 V s), high on/off current ratio (Ion Ioff) of ∼ 105, and good photo-to-dark current ratio (Iph Idark =∼ 104) under an ultraviolet (364 nm) illumination while that with Au SD electrodes showed much lower device performance (μ=∼0.08 cm2 V s, Ion Ioff =∼ 104, and Iph Idark =∼20), although the both TFTs operated at a low voltage of -8 V. With the hole-injection and light-reception advantages of Ni Ox electrode, our tetracene photo-TFT demonstrated good dynamic optical gating.

Original language	English
Article number	116102
Journal	Journal of Applied Physics
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.2396712
Publication status	Published - 2006

Bibliographical note

Funding Information:
This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and LG.Philips LCD (project year 2005). They also acknowledge the support from Brain Korea 21 Project and Seoul Science Fellowship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.2396712

Cite this

@article{9eb4936409384bfa9722915368a0b24d,

title = "Advantages of NiOx electrode over Au in low-voltage tetracene-based phototransistors",

abstract = "We report on the tetracene-based photo-thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenol (PVP)/aluminum oxide (Al Ox) bilayer for a gate dielectric and two different source/drain (SD) electrodes: semitransparent Ni Ox and Au. Our tetracene-based TFT with Ni Ox SD electrode exhibited quite good field effect mobility (μ=∼0.23 cm2 V s), high on/off current ratio (Ion Ioff) of ∼ 105, and good photo-to-dark current ratio (Iph Idark =∼ 104) under an ultraviolet (364 nm) illumination while that with Au SD electrodes showed much lower device performance (μ=∼0.08 cm2 V s, Ion Ioff =∼ 104, and Iph Idark =∼20), although the both TFTs operated at a low voltage of -8 V. With the hole-injection and light-reception advantages of Ni Ox electrode, our tetracene photo-TFT demonstrated good dynamic optical gating.",

author = "Choi, {Jeong M.} and Kimoon Lee and Hwang, {D. K.} and Kim, {Jae Hoon} and Seongil Im and Park, {Ji Hoon} and Eugene Kim",

note = "Funding Information: This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and LG.Philips LCD (project year 2005). They also acknowledge the support from Brain Korea 21 Project and Seoul Science Fellowship.",

year = "2006",

doi = "10.1063/1.2396712",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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T1 - Advantages of NiOx electrode over Au in low-voltage tetracene-based phototransistors

AU - Choi, Jeong M.

AU - Lee, Kimoon

AU - Hwang, D. K.

AU - Kim, Jae Hoon

AU - Im, Seongil

AU - Park, Ji Hoon

AU - Kim, Eugene

N1 - Funding Information: This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and LG.Philips LCD (project year 2005). They also acknowledge the support from Brain Korea 21 Project and Seoul Science Fellowship.

PY - 2006

Y1 - 2006

N2 - We report on the tetracene-based photo-thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenol (PVP)/aluminum oxide (Al Ox) bilayer for a gate dielectric and two different source/drain (SD) electrodes: semitransparent Ni Ox and Au. Our tetracene-based TFT with Ni Ox SD electrode exhibited quite good field effect mobility (μ=∼0.23 cm2 V s), high on/off current ratio (Ion Ioff) of ∼ 105, and good photo-to-dark current ratio (Iph Idark =∼ 104) under an ultraviolet (364 nm) illumination while that with Au SD electrodes showed much lower device performance (μ=∼0.08 cm2 V s, Ion Ioff =∼ 104, and Iph Idark =∼20), although the both TFTs operated at a low voltage of -8 V. With the hole-injection and light-reception advantages of Ni Ox electrode, our tetracene photo-TFT demonstrated good dynamic optical gating.

AB - We report on the tetracene-based photo-thin-film transistors (photo-TFTs) which adopt thin poly-4-vinylphenol (PVP)/aluminum oxide (Al Ox) bilayer for a gate dielectric and two different source/drain (SD) electrodes: semitransparent Ni Ox and Au. Our tetracene-based TFT with Ni Ox SD electrode exhibited quite good field effect mobility (μ=∼0.23 cm2 V s), high on/off current ratio (Ion Ioff) of ∼ 105, and good photo-to-dark current ratio (Iph Idark =∼ 104) under an ultraviolet (364 nm) illumination while that with Au SD electrodes showed much lower device performance (μ=∼0.08 cm2 V s, Ion Ioff =∼ 104, and Iph Idark =∼20), although the both TFTs operated at a low voltage of -8 V. With the hole-injection and light-reception advantages of Ni Ox electrode, our tetracene photo-TFT demonstrated good dynamic optical gating.

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